Abstract: In an embodiment, a method includes forming a first fin and a second fin within an insulation material over a substrate, the first fin and the second fin includes different materials, the insulation material being interposed between the first fin and the second fin, the first fin having a first width and the second fin having a second width; forming a first capping layer over the first fin; and forming a second capping layer over the second fin, the first capping layer having a first thickness, the second capping layer having a second thickness different from the first thickness.

Abstract: Embodiments described herein relate to process systems for cleaning semiconductor process chamber components. The process systems include a process chamber having process chamber components. The process chamber components include a substrate support disposed within a chamber volume of the process chamber. A gas distribution assembly faces the substrate support. A gas baffle is fluidly coupled to the gas distribution assembly. A sensor system is coupled to the process chamber and is configured to monitor at least one characteristic of the volume of the process chamber. A dynamic gas assist is fluidly coupled to the gas baffle and is communicatively coupled to the sensor.

Abstract: A method for forming a silicon oxide film on a step formed on a substrate includes: (a) designing a topology of a final silicon oxide film by preselecting a target portion of an initial silicon nitride film to be selectively deposited or removed or reformed with reference to a non-target portion of the initial silicon nitride film resulting in the final silicon oxide film; and (b) forming the initial silicon nitride film and the final silicon oxide film on the surfaces of the step according to the topology designed in process (a), wherein the initial silicon nitride film is deposited by ALD using a silicon-containing precursor containing halogen, and the initial silicon nitride film is converted to the final silicon oxide film by oxidizing the initial silicon nitride film without further depositing a film wherein a Si—N bond in the initial silicon nitride film is converted to a Si—O bond.

Abstract: A method for forming a silicon oxide film on a step formed on a substrate includes: (a) designing a topology of a final silicon oxide film by preselecting a target portion of an initial silicon nitride film to be selectively deposited or removed or reformed with reference to a non-target portion of the initial silicon nitride film resulting in the final silicon oxide film; and (b) forming the initial silicon nitride film and the final silicon oxide film on the surfaces of the step according to the topology designed in process (a), wherein the initial silicon nitride film is deposited by ALD using a silicon-containing precursor containing halogen, and the initial silicon nitride film is converted to the final silicon oxide film by oxidizing the initial silicon nitride film without further depositing a film wherein a Si—N bond in the initial silicon nitride film is converted to a Si—O bond.

Abstract: A substrate wafer composed of a hexagonal single crystal material including a C crystalline plane, an A crystalline plane, and an M-axis direction includes a top surface is a C-axis plane; a first side connecting to the aforementioned top surface and being substantially a curve line viewing from the direction perpendicular to the aforementioned C crystalline plane and including a curvature center; and a second side connecting to the aforementioned first side; and wherein there is a line segment defined by a shortest distance between the aforementioned second side and the aforementioned curvature center, and the aforementioned line segment is not parallel with the aforementioned M-axis direction.

Abstract: A substrate wafer composed of a hexagonal single crystal material including a C crystalline plane, an A crystalline plane, and an M-axis direction includes a top surface is a C-axis plane; a first side connecting to the aforementioned top surface and being substantially a curve line viewing from the direction perpendicular to the aforementioned C crystalline plane and including a curvature center; and a second side connecting to the aforementioned first side; and wherein there is a line segment defined by a shortest distance between the aforementioned second side and the aforementioned curvature center, and the aforementioned line segment is not parallel with the aforementioned M-axis direction.

Abstract: A method of manufacturing a light-emitting diode comprises the steps of providing a substrate comprising an upper surface and a bottom surface opposite to the upper surface; providing a semiconductor stack layer on the upper surface, wherein the semiconductor stack layer comprises a first type semiconductor layer having a first surface, a light-emitting layer on the first type semiconductor layer for emitting light, and a second type semiconductor layer on the light-emitting layer; treating the first surface to form a second surface, wherein the second surface is flatter than the first surface; and providing a laser beam through the second surface to cut the substrate.

Abstract: A method of manufacturing a light-emitting diode comprises the steps of providing a substrate comprising an upper surface and a bottom surface opposite to the upper surface; providing a semiconductor stack layer on the upper surface, wherein the semiconductor stack layer comprises a first type semiconductor layer having a first surface, a light-emitting layer on the first type semiconductor layer for emitting light, and a second type semiconductor layer on the light-emitting layer; treating the first surface to form a second surface, wherein the second surface is flatter than the first surface; and providing a laser beam through the second surface to cut the substrate.

Abstract: A light-emitting diode includes a substrate, the substrate including an upper surface, a bottom surface opposite to the upper surface, and a side surface; a first type semiconductor layer on the upper surface, wherein the first type semiconductor layer includes a first portion and a second portion, and the second portion includes an edge surrounding the first portion; a light-emitting layer on the first portion; and a second type semiconductor layer on the light-emitting layer, wherein the second portion includes a first surface and a second surface, and a first distance is between the first surface and the upper surface, and a second distance is between the second surface and the upper surface and is smaller than the first distance; wherein the first surface is rougher than the second surface, and the second surface is located at the edge.

Abstract: A light-emitting diode, comprising: a substrate, the substrate comprising an upper surface, a bottom surface opposite to the upper surface, and a side surface; a first type semiconductor layer on the upper surface, wherein the first type semiconductor layer comprises a first portion and a second portion, and the second portion comprises an edge surrounding the first portion; a light-emitting layer on the first portion; and a second type semiconductor layer on the light-emitting layer, wherein the second portion comprising a first surface and a second surface, and a first distance is between the first surface and the upper surface, and a second distance is between the second surface and the upper surface and is smaller than the first distance; wherein the first surface is rougher than the second surface, and the second surface is located at the edge.