Abstract: A memory cell structure includes a transistor structure and a capacitor structure, where the capacitor structure includes a hydrogen absorption layer. The hydrogen absorption layer absorbs hydrogen, which prevents or reduces the likelihood of the hydrogen diffusing into an underlying metal-oxide channel of the transistor structure. In this way, the hydrogen absorption layer minimizes and/or reduces the likelihood of hydrogen contamination in the metal-oxide channel, which may enable a low current leakage to be achieved for the memory cell structure and reduces the likelihood of data corruption and/or failure of the memory cell structure, among other examples.

Abstract: Silver-amended carbon materials containing silver nanoparticles are prepared by a process involving an initial reduction of a porous carbon material, followed by contacting the reduced porous carbon material with an aqueous solution of a silver salt. Such silver-amended carbon materials may contain a relatively high loading of silver nanoparticles on both the outside surface and within the interior of the porous carbon material and are useful for disinfecting and/or otherwise purifying fluids such as microbe-containing fluids.

Abstract: Silver-amended carbon materials containing silver nanoparticles are prepared by a process involving an initial reduction of a porous carbon material, followed by contacting the reduced porous carbon material with an aqueous solution of a silver salt. Such silver-amended carbon materials may contain a relatively high loading of silver nanoparticles on both the outside surface and within the interior of the porous carbon material and are useful for disinfecting and/or otherwise purifying fluids such as microbe-containing fluids.