Abstract: The present disclosure provides a correction system and method for correcting a semiconductor circuit. The correction system includes a plurality of redundant circuit units, a plurality of switching circuit units and a control circuit. The redundant circuit units are coupled to the semiconductor circuit. The switching circuit units are coupled to the redundant circuit units and a plurality of basic circuit units of the semiconductor circuit. The control circuit is coupled to the semiconductor circuit and the switching circuit units, is configured to obtain a noise signal of the semiconductor circuit, is configured to determine whether the semiconductor circuit passes a noise test by recognizing a characteristic of the noise signal, and is configured to replace one of the basic circuit units with one of the redundant circuit units by controlling the switching circuit units when the semiconductor circuit does not pass the noise test.

Abstract: A magnetic field sensing apparatus and a sensing method are provided. The magnetic field sensing apparatus includes an anisotropic magnetoresistive (AMR) resistor, a current generator, and an arithmetic device. The AMR resistor is configured to provide a first resistance value according to a sensed magnetic field in a first magnetic field sensing phase and provide a second resistance value according to the sensed magnetic field in a second magnetic field sensing phase by a magnetized direction setting operation. The current generator provides a current based on a current direction to flow through two ends of the AMR resistor. The arithmetic device is configured to perform an arithmetic operation with respect to a first voltage difference and a second voltage difference generated according to the current respectively in the first magnetic field sensing phase and the second magnetic field sensing phase, and generate a magnetic field sensing voltage result accordingly.

Abstract: A magnetic field sensing apparatus and a detection method thereof are provided. The magnetic field sensing apparatus includes first and second AMR resistors, a current generator, and an arithmetic device. A magnetized direction of the first AMR resistor is set as a first direction. A magnetized direction of the second AMR resistor is set as a second direction opposite to or the same as the first direction. The current generator provides a current in a direction parallel to the first direction to flow through the first and second AMR resistors. The arithmetic device obtains a first detection voltage according to a voltage difference between two terminals of the first AMR resistor, obtains a second detection voltage according to a voltage difference between two terminals of the second AMR resistor, and performs his an arithmetic operation on the first and second detection voltages to obtain a first magnetic field detection result.

Abstract: A magnetic field sensing apparatus and a sensing method are provided. The magnetic field sensing apparatus includes an anisotropic magnetoresistive (AMR) resistor, a current generator, and an arithmetic device. The AMR resistor is configured to provide a first resistance value according to a sensed magnetic field in a first magnetic field sensing phase and provide a second resistance value according to the sensed magnetic field in a second magnetic field sensing phase by a magnetized direction setting operation. The current generator provides a current based on a current direction to flow through two ends of the AMR resistor. The arithmetic device is configured to perform an arithmetic operation with respect to a first voltage difference and a second voltage difference generated according to the current respectively in the first magnetic field sensing phase and the second magnetic field sensing phase, and generate a magnetic field sensing voltage result accordingly.

Abstract: A magnetic field sensing apparatus including a substrate, first, second, and third magnetic field sensing units, and a switching circuit is provided. The substrate has a surface, and has a first inclined surface and a second inclined surface. The first magnetic field sensing unit includes a plurality of magnetoresistance sensors connected together to form a Wheatstone full bridge and disposed on the surface. The second magnetic field sensing unit includes a plurality of magnetoresistance sensors connected together to form a Wheatstone half bridge and disposed on the first inclined surface. The third magnetic field sensing unit includes a plurality of magnetoresistance sensors connected together to form a Wheatstone half bridge and disposed on the second inclined surface. The switching circuit electrically connects the second magnetic field sensing unit and the third magnetic field sensing unit. A magnetic field sensing module is also provided.

Abstract: A magnetic field sensing apparatus and a detection method thereof are provided. The magnetic field sensing apparatus includes first and second AMR resistors, a current generator, and an arithmetic device. A magnetized direction of the first AMR resistor is set as a first direction. A magnetized direction of the second AMR resistor is set as a second direction opposite to or the same as the first direction. The current generator provides a current in a direction parallel to the first direction to flow through the first and second AMR resistors. The arithmetic device obtains a first detection voltage according to a voltage difference between two terminals of the first AMR resistor, obtains a second detection voltage according to a voltage difference between two terminals of the second AMR resistor, and performs his an arithmetic operation on the first and second detection voltages to obtain a first magnetic field detection result.

Abstract: A magnetic field sensing apparatus including a substrate, first, second, and third magnetic field sensing units, and a switching circuit is provided. The substrate has a surface, and has a first inclined surface and a second inclined surface. The first magnetic field sensing unit includes a plurality of magnetoresistance sensors connected together to form a Wheatstone full bridge and disposed on the surface. The second magnetic field sensing unit includes a plurality of magnetoresistance sensors connected together to form a Wheatstone half bridge and disposed on the first inclined surface. The third magnetic field sensing unit includes a plurality of magnetoresistance sensors connected together to form a Wheatstone half bridge and disposed on the second inclined surface. The switching circuit electrically connects the second magnetic field sensing unit and the third magnetic field sensing unit. A magnetic field sensing module is also provided.

Abstract: The present invention provides a method of SNP detection by using DASH technique in bead-based microfluidics comprising following steps: (a) immobilizing a target single-strand DNA onto a microbead; (b) hybridizing the target single-strand DNA with an allele-specific probe; (c) intercalating a dye into a target-probe duplex region; (d) delivering the microbead into a microchannel; (e) heating the microbead to denature a hybridized DNA obtained from the step (c); (f) monitoring a fluorescence intensity of the hybridized DNA during the step (e) to obtain a melting curve; and (g) determining the SNP by a melting curve analysis method. Also, the present invention offers a rapid genotyping detection scheme with minimal amount of the reagents by confining the microbeads into designed fluidic traps and performing melting curve analysis controlled by a temperature control platform. The trapping mechanism was validated and optimized.