Abstract: A method of forming a SIMS monitor device for determining a doping profile of a semiconductor device structure including providing a plurality of regularly repeating semiconductor structures including a doping profile to form a monitor device including at least one layer of the regularly repeating semiconductor structures; planarizing the monitor device through a thickness of the regularly repeating semiconductor structures to reveal a target surface overlying the doping profile to form a monitor pattern; and, sputtering the target surface over a sputtering area including the monitor pattern through a thickness thereof while simultaneously detecting and counting over a time interval at least one type of species ejected from the target surface according to a secondary ion mass spectroscopy procedure (SIMS).

Abstract: A method of forming an FSG film comprising the following steps. A structure is provided. An FSG film is formed over the structure by an HDP-CVD process under the following conditions: no Argon (Ar)—side sputter; SiF4 flow: from about 53 to 63 sccm; an N2 flow: from about 25 to 35 sccm; and an RF power to provide a uniform plasma density.

Abstract: A method of etching a low dielectric constant material with an aqueous solution of hydrofluoric acid and hydrochloric acid. The etching solution is particularly useful on low dielectric constant materials that are water repulsive or hydrophobic. The weight ratio of hydrofluoric acid to hydrochloric acid in the aqueous solution ranges from 1:3 to 4:1.

Abstract: A method of removing residual fluorine present in a HDP-CVD chamber which includes a high pressure seasoning process, a dry-cleaning process, and a low-pressure deposition process.

Abstract: A method of forming a SIMS monitor device for determining a doping profile of a semiconductor device structure including providing a plurality of regularly repeating semiconductor structures including a doping profile to form a monitor device including at least one layer of the regularly repeating semiconductor structures; planarizing the monitor device through a thickness of the regularly repeating semiconductor structures to reveal a target surface overlying the doping profile to form a monitor pattern; and, sputtering the target surface over a sputtering area including the monitor pattern through a thickness thereof while simultaneously detecting and counting over a time interval at least one type of species ejected from the target surface according to a secondary ion mass spectroscopy procedure (SIMS).

Abstract: A method of removing residual fluorine present in a HDP-CVD chamber which may include a high pressure seasoning process, a dry cleaning process and a low pressure deposition process is disclosed.

Abstract: A method of etching a low dielectric constant material with an aqueous solution of hydrofluoric acid and hydrochloric acid. The etching solution is particularly useful on low dielectric constant materials that are water repulsive or hydrophobic. The weight ratio of hydrofluoric acid to hydrochloric acid in the aqueous solution ranges from 1:3 to 4:1.

Abstract: A low temperature process for forming palladium silicided shallow junctions in which ions are implanted into a palladium or a palladium silicide layer over a silicon substrate. The impurities are driven into the silicon substrate during the formation or recrystallization of the palladium silicide layer, and a diffusion region with shallow junction is formed in the substrate.