Abstract: Physical modeling and machine learning modeling are combined to analyze signals from multiple data sources, including metrology data acquired from different tool sets or at different process steps, and data related to processing equipment, such as sensor data, process parameters, Advanced Process Control (APC) parameters, context data, etc. At least one physical model is generated and used to analyze metrology signals from metrology tools to extract measurement results for key and non-key parameters of a structure on a sample. At least one machine learning model is built and trained to predict parameters of interest based on the extracted measurement results as well as additional data, including raw measured signals, reference data and/or design of experiment (DOE) data, and data from different tool sets or the same tool as used for the physical modeling.

Abstract: Complex structures, such as gate-all-around (GAA) field effect transistor or high-aspect ratio (HAR) Channel hole etch, etc., in semiconductor devices are measured using a combination of physical modeling and machine learning modeling. Metrology signals collected at different manufacturing process steps, e.g., pre-process step and post-process step of the structure of interest (SOI) may be used. The measurement signals acquired at the pre-process steps are used to determine a first parameter of the SOT, e.g., using physical modeling and machine learning, which may be fed forward and used to generate a physical model of the SOI at the post-process step. A second parameter of the SOI at the post-process step is determined using physical modeling and machine learning and may be fed back and used to generate the physical model of the SOI at the post-process step with post process signals and used to determine other parameters.