Patents by Inventor Pei GAO

Pei GAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11978385
    Abstract: This disclosure provides various techniques for providing fine-grain digital and analog pixel compensation to account for voltage error across an electronic display. By employing a two-dimensional digital compensation and a local analog compensation, a fine-grain and robust pixel compensation scheme may be provided to the electronic display.
    Type: Grant
    Filed: August 16, 2022
    Date of Patent: May 7, 2024
    Assignee: Apple Inc.
    Inventors: Yao Shi, Wei H Yao, Hyunwoo Nho, Jie Won Ryu, Kingsuk Brahma, Li-Xuan Chuo, Hyunsoo Kim, Myungjoon Choi, Ce Zhang, Alex H Pai, Shengkui Gao, Rungrot Kitsomboonloha, Shatam Agarwal, Vehbi Calayir, Chaohao Wang, Steven N Hanna, Pei-En Chang
  • Patent number: 11960167
    Abstract: A backplane includes: a substrate including a circuit structure layer, a first reflective layer disposed on a bearing surface of the substrate, a plurality of light-emitting diode chips, and a plurality of optical structures. The first reflective layer includes a plurality of through holes spaced apart. A light-emitting diode chip in the plurality of light-emitting diode chips is located in one of the plurality of through holes. The plurality of light-emitting diode chips are electrically connected to the circuit structure layer. The circuit structure layer is configured to drive the plurality of light-emitting diode chips to emit light. An optical structure in the plurality of optical structures covers the light-emitting diode chip, a light incident surface of the optical structure is in contact with a light exit surface of the light-emitting diode chip, and a light exit surface of the optical structure is a curved surface.
    Type: Grant
    Filed: February 5, 2021
    Date of Patent: April 16, 2024
    Assignees: BOE MLED Technology Co., Ltd., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Pei Li, Haiwei Sun, Ming Zhai, Lu Yu, Kangle Chang, Jinpeng Li, Pengjun Cao, Yutao Hao, Shubai Zhang, Shuo Wang, Pei Qin, Zewen Gao, Yali Zhang
  • Publication number: 20210292879
    Abstract: A superalloy seamless pipe and a preparation method thereof are provided. The superalloy seamless pipe comprises the following components in percentages by weight: C:0.01-0.06%, Si:0.40-1.00%, Mn:0.30-1.00%, P?0.025%, S?0.020%, Cr:15.00-17.00%, Ni:44.00-46.00%, Al:2.90-3.90%, Ce:0.01-0.03%, Ti:0.10-0.30%, N:0.03-0.08%, and the balance of Fe and inevitable impurities.
    Type: Application
    Filed: June 4, 2020
    Publication date: September 23, 2021
    Inventors: Rui LUO, Zhizhong YUAN, Xiaonong CHENG, Pei GAO, Leli CHEN, Tian LIU
  • Publication number: 20200338042
    Abstract: The present disclosure relates to use of daphnetin in preparation of composition for improving cognitive ability, particularly discloses use of daphnetin in preparation of a composition for preventing or treating disorders caused by increased ?-amyloid level, and use of daphnetin as an inhibitor of ?-amyloid. The present disclosure also relates to use of daphnetin in preparation of a composition for preventing or treating cognitive disorders, which are the Alzheimer's disease and Parkinson's disease.
    Type: Application
    Filed: April 22, 2020
    Publication date: October 29, 2020
    Inventors: JIAN-GANG LONG, PEI-PEI GAO, ZHEN WANG, HONG-BIN QI, YUE XIONG, QING-QING MA, BING LIANG, JIAN-KANG LIU
  • Publication number: 20050006712
    Abstract: A Si-rich silicon oxide layer having reduced UV transmission is deposited by PECVD, on an interlayer dielectric, prior to metallization, thereby reducing Vt. Embodiments include depositing a UV opaque Si-rich silicon oxide layer having an R.I. of 1.7 to 2.0.
    Type: Application
    Filed: July 11, 2003
    Publication date: January 13, 2005
    Inventors: Minh Ngo, Mark Ramsbey, Tazrien Kamal, Pei_ Gao