Patents by Inventor Pei-Hsiang Liao

Pei-Hsiang Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Writing method for resistive memory cell and resistive memory
    Patent number: 9496036
    Abstract: A writing method for a resistive memory cell and a resistive memory are provided. The writing method includes following steps. A reference voltage is provided to a bit line of the resistive memory cell. A first voltage is provided to a word line of the resistive memory cell, and a second voltage is provided to a source line of the resistive memory cell, wherein the first voltage is not increased while the second voltage is progressively increased. Thus, when the writing method for the resistive memory cell is performed, the voltage of the word line is not increased while the voltage of the source line is progressively increased, so as to expand voltage window for reset operation. And, the chance for occurring the complementary switching manifestation of the resistive memory cell due to excessive input voltages is reduced.
    Type: Grant
    Filed: November 30, 2015
    Date of Patent: November 15, 2016
    Assignee: Winbond Electronics Corp.
    Inventors: Frederick Chen, Ping-Kun Wang, Shao-Ching Liao, Pei-Hsiang Liao