Abstract: A digital compute-in-memory (DCIM) macro includes a memory cell array and an arithmetic logic unit (ALU). The memory cell array stores weight data of a neural network. The ALU receives parallel bits of a same input channel in an activation input, and generates a convolution computation output of the parallel bits and target weight data in the memory cell array.

Abstract: Provided is a method of accurate and sensitive characterization and prognosis of prostate cancer in a subject. The method includes obtaining a biological sample from the subject and determining the level of identified biomarkers.

Abstract: A digital compute-in-memory (DCIM) system includes a first DCIM macro. The first DCIM macro includes a first memory cell array and a first arithmetic logic unit (ALU). The first memory cell array has N rows that are configured to store weight data of a neural network in a single weight data download session, wherein N is a positive integer not smaller than two. The first ALU is configured to receive a first activation input, and perform convolution operations upon the first activation input and a single row of weight data selected from the N rows of the first memory cell array to generate first convolution outputs.

Abstract: The present disclosure provides a method and a system for scanning wafer. The system captures a defect image of a wafer, and generates a reference image corresponding to the first defect image based on a reference image generation model. The system generates a defect marked image based on the defect image and the reference image.

Abstract: A method for evaluating a risk of a subject getting a specific disease includes steps of: storing a reference database that contains original parameter sets; selecting target alleles from an SNP profile derived from genome sequencing data of a subject; selecting target parameter sets from among the original parameter sets; calculating, for each of the target parameter sets, a race factor based on a global risk allele frequency and a group-specific risk allele frequency included in the target parameter set; calculating a genetic factor based on statistics, global reference allele frequencies, the race factors for the target parameter sets, and numbers of chromosomes in homologous chromosome pairs included in the target parameter sets; calculating a citation factor based on numbers of citation times included in the target parameter sets; and calculating a risk score based on the genetic factor and the citation factor.

Abstract: A transparent display panel with a light-transmitting substrate, a plurality of top-emitting micro light emitting diodes, a plurality of bottom-emitting micro light emitting diodes, and a light shielding layer. The light transmissive substrate has a surface. These top-emitting micro light emitting diodes and these bottom-emitting micro light emitting diodes are disposed on the surface of the light transmissive substrate. The bottom-emitting micro light emitting diodes has an epitaxial structure and a light shielding member, the epitaxial structure has a pair of upper and lower surfaces on the opposite sides, the lower surface faces toward the light transmissive substrate, and the light shielding member is disposed on the upper surface to shield the light emitted by the bottom-emitting micro light emitting diodes towards the upper surface.

Abstract: A micro LED display device includes a substrate, micro LED units and a transparent insulation layer. The substrate includes conductive pads and conductive connecting portions. The conductive pads are disposed on the substrate. Each of the micro LED units includes a semiconductor epitaxial structure and electrodes. The electrodes are disposed on the semiconductor epitaxial structure, and each of the electrodes is connected to one of the conductive connecting portions adjacent to each other. The transparent insulation layer is disposed on the substrate and covers the conductive pads, the conductive connecting portions and the micro LED units, and the transparent insulation layer is filled between the electrodes of each of the micro LED units. The transparent insulation layer relative to a surface on each of the semiconductor epitaxial structures is of a first thickness and a second thickness, and the first thickness is different from the second thickness.

Abstract: A micro LED display device including a display substrate, a plurality of conductive pad pairs and a plurality of micro light emitting elements is provided. The display substrate has a first arranging area, a splicing area connected to the first arranging area, and a second arranging area connected to the splicing area, wherein the splicing area is located between the first arranging area and the second arranging area. The conductive pad pairs are disposed on the display substrate in an array with the same pitch. The micro light emitting elements are disposed on the display substrate and are electrically bonded to the conductive pad pairs. A manufacturing method of the micro LED display device is also provided.

Abstract: A micro light emitting diode includes an epitaxial structure, a first electrode, a second electrode, at least one via and an insulating layer. The epitaxial structure has a surface and includes a first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer. The first electrode and the second electrode are respectively disposed on the surface of the epitaxial structure. The second electrode is located outside around the first electrode and symmetrically disposed with respect to a geometric center of a bonding surface of the epitaxial structure. The via extends from the second-type semiconductor layer to the first-type semiconductor layer. The insulating layer is disposed on the second-type semiconductor layer together with the first electrode. The insulating layer extends to cover an inner wall of the via, and the via is non-symmetrically disposed with respect to the geometric center of the bonding surface of the epitaxial structure.

Abstract: A micro light-emitting device display apparatus includes a circuit substrate, at least one micro light-emitting device, and at least one conductive bump. The circuit substrate includes at least one pad. The micro light-emitting device is disposed on the circuit substrate and includes at least one electrode. At least one of the pad and the electrode has at least one closed opening. The conductive bump is disposed between the circuit substrate and the micro light-emitting device. The conductive bump extends into the closed opening and defines at least one void with the closed opening. The electrode of the micro light-emitting device is electrically connected to the pad of the circuit substrate with the conductive bump.

Abstract: Herein disclosed are a micro-component transfer head, a micro-component transfer device, and a micro-component display. Said micro-component transfer head comprises a carrying surface that corresponds to a micro-component extraction area. Said extraction area conforms with a first geometric object, which comprises at least an acute angle. A second geometric object comprises at least a right angle and is constituted of n copies of the first geometric object, n being an integer greater than 1. The shape of the first geometric object differs from that of the second.

Abstract: The present invention discloses a display panel and a head mounted device. The display panel includes a substrate and a plurality of micro light emitting units. A first position and a second position are defined at an edge and a center of the substrate respectively. The micro light emitting units are arranged and disposed on the substrate. Any two of the micro light emitting units are disposed at the first position and the second position respectively. Wherein each micro light emitting unit defines a luminating top surface, and a reference angle is defined between each luminating top surface and a reference plane respectively. Wherein the reference angle defined between each luminating top surface and the reference plane gradually decreases from the first position to the second position, and the luminating top surface of the micro light emitting unit located at the second position is parallel to the reference surface.

Abstract: The present invention discloses a substrate configured to receive a plurality of micro elements on a carrier board. The substrate comprises a body, a first conductive bump, and a second conductive bump. The body has a first surface, a transfer area is defined within the first surface, and a central portion and a peripheral portion is defined within the transfer area. The first conductive bump, disposed on the central portion, has a first volume. The second conductive bump, disposed on the peripheral portion, has a second volume. Wherein the first volume is different from the second volume.

Abstract: A micro semiconductor device and a micro semiconductor display are provided. The micro semiconductor device includes an epitaxial structure, a first electrode, a second electrode and a supporting layer. The epitaxial structure has a bottom surface and a top surface, wherein the bottom surface is defined as a central region and a peripheral region. A first electrode and a second electrode are disposed on the central region of the bottom surface of the epitaxial structure, or the first electrode is disposed on the central region of the bottom surface of the epitaxial structure and the second electrode is disposed on the top surface of the epitaxial structure. The supporting layer is disposed on the peripheral region of the bottom surface of the epitaxial structure.

Abstract: A micro light-emitting diode device includes a substrate, a micro light-emitting diode, a first protection layer and a second protection layer. The micro light-emitting diode is disposed on the substrate. The first protection layer is disposed on a first portion of an outer side wall of the micro light-emitting diode and has a gap from the substrate. The second protection layer is at least disposed on a second portion of the outer side wall and is located in the gap between the first protection layer and the substrate. A height of the second protection layer on the substrate is less than or equal to a height of the micro light-emitting diode on the substrate.

Abstract: A micro light-emitting diode device includes a substrate, a micro light-emitting diode, a first protection layer and a second protection layer. The micro light-emitting diode is adapted to be disposed on the substrate. The first protection layer is disposed on a first portion of an outer side wall of the micro light-emitting diode and has a gap from the substrate. The second protection layer is disposed on a second portion of the outer side wall of the micro light-emitting diode. The second protection layer is located in the gap between the first protection layer and the substrate and covers a part of the first protection layer. A maximum thickness of the first protection layer on the outer side wall is less than a maximum thickness of the second protection layer on the outer side wall.

Abstract: A micro LED display device includes a substrate, micro LED units and a transparent insulation layer. The substrate includes conductive pads and conductive connecting portions. The conductive pads are disposed on the substrate. Each of the micro LED units includes a semiconductor epitaxial structure and electrodes. The electrodes are disposed on the semiconductor epitaxial structure, and each of the electrodes is connected to one of the conductive connecting portions adjacent to each other. The transparent insulation layer is disposed on the substrate and covers the conductive pads, the conductive connecting portions and the micro LED units, and the transparent insulation layer is filled between the electrodes of each of the micro LED units. The transparent insulation layer relative to a surface on each of the semiconductor epitaxial structures is of a first thickness and a second thickness, and the first thickness is different from the second thickness.

Abstract: A micro-LED display panel including a substrate, an anisotropic conductive film, and a plurality of micro-LEDs is provided. The anisotropic conductive film is disposed on the substrate. The micro-LEDs and the anisotropic conductive film are disposed at the same side of the substrate, and the micro-LEDs are electrically connected to the substrate through the anisotropic conductive film. Each of the micro-LEDs includes an epitaxial layer and an electrode layer electrically connected to the epitaxial layer, and the electrode layers comprises a first electrode and a second electrode which are located between the substrate and the corresponding epitaxial layer. A ratio of a thickness of each of the electrode layers to a thickness of the corresponding epitaxial layer ranges from 0.1 to 0.5, and a gap between the first electrode and the second electrode of each of the micro-LEDs is in a range of 1 ?m to 30 ?m.

Abstract: A carrier structure suitable for transferring or supporting a plurality of micro devices includes a carrier and a plurality of transfer units. The carrier has a carrier surface and a plurality of recesses disposed on the carrier surface. The transfer units are respectively disposed in the recesses and a plurality of transferring surfaces are exposed. Each micro device has a device surface. The transferring surface of each transfer unit is configured to be connected to the device surface of the corresponding micro device. A micro device structure including the carrier structure is also provided.