Abstract: A headband device is provided. The headband device includes a first knob, a first transmission mechanism, a vertical adjustment mechanism and a vertical headband. The first knob is rotated around a first axis. The first transmission mechanism is connected to the first knob, wherein the first transmission mechanism is rotated by the first knob around a second axis, wherein the first axis is perpendicular to the second axis. The vertical adjustment mechanism is adapted to be connected to the first transmission mechanism, wherein the vertical adjustment mechanism is rotated by the first transmission mechanism and is rotated around the second axis. The vertical headband is connected to the vertical adjustment mechanism, wherein the vertical headband is moved by the vertical adjustment mechanism and the tightness of the vertical headband is adjustable.

Abstract: A method of fabricating a TFT array substrate and a metal layer thereof is provided. First, a substrate having a first patterned metal layer disposed thereon is provided, wherein the first patterned metal layer is formed by an electroplating method. Then, a gate insulating layer is formed on the substrate, wherein the gate insulating layer covers the first metal layer. Next, a semiconductive layer is formed on the gate insulating layer over the first metal layer. Then, a patterned second metal layer is formed on the semiconductive layer. The first metal layer, the second metal layer and the semiconductive layer constitute a plurality of thin film transistors, a plurality of scanning lines and a plurality of data lines, wherein the scanning lines and the data lines are coupled to the thin film transistors.

Abstract: A method of fabricating a TFT array substrate and a metal layer thereof is provided. First, a substrate having a first patterned metal layer disposed thereon is provided, wherein the first patterned metal layer is formed by an electroplating method. Then, a gate insulating layer is formed on the substrate, wherein the gate insulating layer covers the first metal layer. Next, a semiconductive layer is formed on the gate insulating layer over the first metal layer. Then, a patterned second metal layer is formed on the semiconductive layer. The first metal layer, the second metal layer and the semiconductive layer constitute a plurality of thin film transistors, a plurality of scanning lines and a plurality of data lines, wherein the scanning lines and the data lines are coupled to the thin film transistors.

Abstract: A precise cutting device for splitting a test piece. The device includes a microscope and a cutter. The microscope has a movable stage and a lens set. The stage supports the test piece. The lens set is adjustable to show the microstructure of the test piece. The cutter disposed under the stage of the microscope can pass through the opening of the stage to form notches on the surface of the test piece.