Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.

Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.

Abstract: A magnetic speed controlling twist grip assembly includes a linear IC, first and second magnets, a stationary member; and a rotary handle turnably connected to the stationary member at an inward end. The linear IC is disposed in the stationary member. The first and second magnets are disposed at the inward end of the handle such that different magnetic poles thereof face respective ones of opposite sides of the linear IC. The magnetic field around the linear IC is changed when position of the magnets relative to the linear IC is adjusted with the user's hand turning the rotary handle, and in turn, electric currents passing through the linear IC is changed. A control device, to which the linear IC is electrically connected, will control electric power supplied from a storage battery to a motor accordingly, thus controlling speed of the motor.