Abstract: An indoor occupancy distribution analysis system is provided, which includes a base station and a network management device that communicate with each other. The base station is configured to collect performance indicators corresponding to each user equipment from the base station. The performance indicators are associated with the communication between the user equipment and the base station. The network management device is configured to receive these performance indicators, input them into a classifier, obtain the inference result output by the classifier, and derive occupancy distribution from the inference result.

Abstract: A method for secure data transmission is provided. The method includes requesting a key from an encryption and decryption application in a near real-time radio access network (RAN) intelligent controller (Near-RT RIC). The method includes receiving the key from the encryption and decryption application. The method includes encrypting data by using the key, and generating encrypted data. The method includes storing the encrypted data to a database in the Near-RT RIC through a shared data layer.

Abstract: Methods of manufacturing electronic devices are described. Embodiments of the present disclosure advantageously provide methods of manufacturing electronic devices that meet reduced thickness, reduced leakage, lower thermal budget, and Vt requirements (including multi-Vt), and have improved device performance and reliability. The method comprises forming a P-dipole stack and an N-dipole stack on a semiconductor substrate by: depositing an interfacial layer (e.g., silicon oxide (SiOx)) on the top surface of the channel; depositing a hafnium-containing layer comprising hafnium oxide (HfOx) and having a thickness of less than or equal to 5 ? on the interfacial layer; and depositing a dipole layer comprising lanthanum nitride (LaN) on the hafnium-containing layer.

Abstract: Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. Embodiments of the disclosure advantageously provide electronic devices which meet reduced thickness, lower thermal budget, and Vt requirements, and have improved device performance and reliability. The electronic devices described herein comprise a source region, a drain region, and a channel separating the source region and the drain region, an interfacial layer on a top surface of the channel, a high-? dielectric layer on the interfacial layer, a dipole layer on the high-? dielectric layer, and a capping layer on the dipole layer. In some embodiments, the dipole layer comprises a metal oxynitride (MON), such as aluminum oxynitride (AlON). In some embodiments, the methods comprise annealing the substrate to drive atoms from the dipole layer into one or more of the interfacial layer or the high-? dielectric layer.

Abstract: A semiconductor device includes a source region and a drain region, a first source contact, a first drain contact, a first drain via and a first source via. The source region and the drain region are located over a substrate. The first source contact is disposed on the source region, and the first drain contact is disposed on the drain region. The first drain via is connected to the first drain contact, wherein the first drain via includes a barrier-less body portion. The first source via is connected to the first source contact, wherein the first source via includes a body portion and a barrier layer surrounding the body portion, and a size of the first source via is greater than a size of the first drain via.

Abstract: Embodiments of the disclosure advantageously provide in situ selectively deposited molybdenum films having reduced resistivity and methods of reducing or eliminating lateral growth of a selectively deposited molybdenum layer. Additional embodiments provide integrated clean and deposition processes which improve the selectivity of in situ selectively deposited molybdenum films on features, such as a via. Further embodiments advantageously provide methods of improving uniformity and selectivity of bottom-up gap fill for vias with improved film properties.

Abstract: A method and device according to the present disclosure includes a substrate that has a first transistor terminal such as a source feature and a second transistor terminal such as another source feature. Contact structures are formed on each source/drain feature. After forming the contact structures, a via opening is formed in dielectric materials above the contact structures, which is filled to form a non-linear via that extends from the contact on the first source feature to the contact on the second source feature. The non-linear via may include an outline in a top view of an undulating-shape having convex and/or concave portions.

Abstract: A method for communication in service management and orchestration is provided. The method includes receiving, by a Non-real time radio access network (RAN) Intelligent Controller (Non-RT RIC) framework, a first subscription message from an Element Management System (EMS), wherein the first subscription message is used to request second data used to run a Non-RT RIC application (rApp). The method includes transmitting, by the Non-RT RIC framework, a first callback message to the rApp according to the first subscription message to notify the rApp that the EMS requests the second data.

Abstract: A wearable system including at least one wearable device and at least one electronic device is provided. The wearable device includes an operation program and an incentive activity program. The wearable device analyzes physiological information and/or physical activity information via the operation program. The operation program outputs a first value. The first value includes a first reward parameter for execution of the incentive activity program. The electronic device performs a transmission with the wearable device. The electronic device outputs reward data and goal setting data to a reward system. The reward system outputs a second value according to the reward data and the goal setting data. The second value includes a second reward parameter for execution of the incentive activity program. In addition, a wearable device and an operating method thereof and a cloud server are also provided.

Abstract: In using an application's drawing feature, users typically use connecting lines between graphical shapes to depict a relationship between the shapes. Drawing connecting lines between two or more graphical shapes within an application can be a time consuming, manual task. An application that automatically generates connecting lines between shapes, based on spatial relationships among the shapes, can reduce the amount of time for drawing a diagram. Functionality can be implemented to generate connecting lines between 1:n shapes based on proximity among the shapes and/or contact between shapes. Automatically generating connecting lines among shapes based on spatial relationships among the shapes allows generating of the connecting lines based on manipulation of shapes, which typically have a larger surface area than a line. Manipulating a larger surface area can be easier than manipulating a line.

Abstract: A structure of a solar cell. The structure of the solar cell includes a substrate, a graded layer and a semiconductor layer. The graded layer is disposed on the substrate. The graded layer is made from materials including the first material and the second material, and includes at least one thin film. One of the at least one thin film includes a mixture of at least the first material and the second material at a mixture ratio. The mixture forms a bandgap of the at least one thin film. The semiconductor layer is disposed on the graded layer.

Abstract: A structure of a solar cell is provided. The structure of the solar cell includes a substrate, a base and a plurality of nanostructures. The base is disposed on the substrate. The nanostructures are disposed on a surface of the base, or a surface of the base includes the nanostructures, so as to increase light absorption of the structure.

Abstract: In using an application's drawing feature, users typically use connecting lines between graphical shapes to depict a relationship between the shapes. Drawing connecting lines between two or more graphical shapes within an application can be a time consuming, manual task. An application that automatically generates connecting lines between shapes, based on spatial relationships among the shapes, can reduce the amount of time for drawing a diagram. Functionality can be implemented to generate connecting lines between 1:n shapes based on proximity among the shapes and/or contact between shapes. Automatically generating connecting lines among shapes based on spatial relationships among the shapes allows generating of the connecting lines based on manipulation of shapes, which typically have a larger surface area than a line. Manipulating a larger surface area can be easier than manipulating a line.

Abstract: A multicarrier direct-sequence code-division multiple-access (MC-DS/CDMA) communications system is provided. A code tree of two-dimensional orthogonal variable spreading factor (2D-OVSF) codes is then generated for the system. To generate the code tree, a set of existing M1×N1 2D-OVSF matrices, in the form of A(i)(M1×N1) for i={1, 2, . . . , K1} is selected as seed matrices. M1 represents the number of available frequency carriers in the MC-DS/CDMA system, and N1 represents a spreading factor code length. Another set of existing M2×N2 2D-OVSF matrices, in the form of B2(i)(M2×N2) for i={1, 2, . . . , K2} is then selected as mapping matrices. The mapping matrices are used to generate corresponding children matrices.

Abstract: A code tree of two-dimensional orthogonal variable spreading factor (2D-OVSF) code matrices for a multicarrier direct-sequence code-division multiple-access (MC-DS/CDMA) communications system is generated by providing two sets of 2×2 orthogonal matrices {A(1)(2×2), A(2)(2×2)} and {B(1)(2×2), B(2)(2×2)}. The first set of 2×2 matrices is used to generate a pair of sibling nodes in the code tree that respectively represent matrices A(1)(2×2?) and A(2)(2×2?) by iterating the relationship: A(1)(2×21+?)=[A(1)(2×2?)A(2)(2×2?)], The matrices A(1)(2×2?) and A(2)(2×2?) are A(2)(2×21+?)=[A(1)(2×2?)?A(2)(2×2?)]. used to generate a child node of one of the sibling nodes. The child node contains an M×N matrix, which is found by iterating the relationship: A(i?1)(O×P)=[B(1)(2×2){circle around (×)}A(i/2)(0/2×P/2)] where {circle around (×)} indicates a Kronecker product.

Abstract: An in-situ performed method utilizing a pure H2O plasma to remove a layer of resist from a substrate or wafer without substantially accumulating charges thereon. Also, in-situ performed methods utilizing a pure H2O plasma or a pure H2O vapor to release or remove charges from a surface or surfaces of a substrate or wafer that have accumulated during one or more IC fabrication processes.

Abstract: A multicarrier direct-sequence code-division multiple-access (MC-DS/CDMA) communications system is provided. A code tree of two-dimensional orthogonal variable spreading factor (2D-OVSF) codes is then generated for the system. To generate the code tree, a set of existing M1×N1 2D-OVSF matrices, in the form of A(i)(M1×N1) for i={1, 2, . . . , K1 } is selected as seed matrices. M1 represents the number of available frequency carriers in the MC-DS/CDMA system, and N1 represents a spreading factor code length. Another set of existing M2×N2 2D-OVSF matrices, in the form of B2(i)(M2×N2) for i={1, 2, . . . , K2} is then selected as mapping matrices. The mapping matrices are used to generate corresponding children matrices.

Abstract: A code tree of two-dimensional orthogonal variable spreading factor (2D-OVSF) code matrices for a multicarrier direct-sequence code-division multiple-access (MC-DS/CDMA) communications system is generated by providing two sets of 2×2 orthogonal matrices {A(1)(2×2), A(2)(2×2)} and {B(1)(2×2), B(2)(2×2)}.