Abstract: A multi-channel payment method for a multi-channel payment system comprises the payer or the payee who initiated the payment request logs in to the multi-channel payment system; the payer or the payee who initiated the payment request placing an order in the multi-channel payment system, wherein the order comprises a designated payment gateway; the multi-channel payment system determining a predicted fee of the order according to the designated payment gateway, past order records, and a real-time exchange rate; the multi-channel payment system performing an anti-money laundering verification of the order; the payer reviewing the order and the predicted fee through a multiple auditing method; and the multi-channel payment system executing payment from the payer to the payee according to the order and the designated payment gateway, and storing a payment detail of the order.

Abstract: A package comprises a substrate including a first surface, and an upper conductive layer arranged on the first surface, a first light-emitting unit arranged on the upper conductive layer, and comprises a first semiconductor layer, a first substrate, a first light-emitting surface and a first side wall, a second light-emitting unit, which is arranged on the upper conductive layer, and comprises a second light-emitting surface and a second side wall, a light-transmitting layer arranged on the first surface and covers the upper conductive layer, the first light-emitting unit, and the second light-emitting unit, a light-absorbing layer, which is arranged between the substrate and the light-transmitting layer in a continuous configuration of separating the first light-emitting unit and the second light-emitting unit from each other, and a reflective wall arranged on the first side wall, wherein a height of the reflective wall is lower than that of the light-absorbing layer.

Abstract: A method for forming a semiconductor package is provided. The method includes forming a first alignment mark in a first substrate of a first wafer and forming a first bonding structure over the first substrate. The method also includes forming a second bonding structure over a second substrate of a second wafer and trimming the second substrate, so that a first width of the first substrate is greater than a second width of the second substrate. The method further includes attaching the second wafer to the first wafer via the first bonding structure and the second bonding structure, thinning the second wafer until a through-substrate via in the second substrate is exposed, and performing a photolithography process on the second wafer using the first alignment mark.

Abstract: A semiconductor device includes a source region and a drain region, a first source contact, a first drain contact, a first drain via and a first source via. The source region and the drain region are located over a substrate. The first source contact is disposed on the source region, and the first drain contact is disposed on the drain region. The first drain via is connected to the first drain contact, wherein the first drain via includes a barrier-less body portion. The first source via is connected to the first source contact, wherein the first source via includes a body portion and a barrier layer surrounding the body portion, and a size of the first source via is greater than a size of the first drain via.

Abstract: Embodiments of the disclosure advantageously provide in situ selectively deposited molybdenum films having reduced resistivity and methods of reducing or eliminating lateral growth of a selectively deposited molybdenum layer. Additional embodiments provide integrated clean and deposition processes which improve the selectivity of in situ selectively deposited molybdenum films on features, such as a via. Further embodiments advantageously provide methods of improving uniformity and selectivity of bottom-up gap fill for vias with improved film properties.

Abstract: A method and device according to the present disclosure includes a substrate that has a first transistor terminal such as a source feature and a second transistor terminal such as another source feature. Contact structures are formed on each source/drain feature. After forming the contact structures, a via opening is formed in dielectric materials above the contact structures, which is filled to form a non-linear via that extends from the contact on the first source feature to the contact on the second source feature. The non-linear via may include an outline in a top view of an undulating-shape having convex and/or concave portions.

Abstract: A method for communication in service management and orchestration is provided. The method includes receiving, by a Non-real time radio access network (RAN) Intelligent Controller (Non-RT RIC) framework, a first subscription message from an Element Management System (EMS), wherein the first subscription message is used to request second data used to run a Non-RT RIC application (rApp). The method includes transmitting, by the Non-RT RIC framework, a first callback message to the rApp according to the first subscription message to notify the rApp that the EMS requests the second data.

Abstract: A wearable system including at least one wearable device and at least one electronic device is provided. The wearable device includes an operation program and an incentive activity program. The wearable device analyzes physiological information and/or physical activity information via the operation program. The operation program outputs a first value. The first value includes a first reward parameter for execution of the incentive activity program. The electronic device performs a transmission with the wearable device. The electronic device outputs reward data and goal setting data to a reward system. The reward system outputs a second value according to the reward data and the goal setting data. The second value includes a second reward parameter for execution of the incentive activity program. In addition, a wearable device and an operating method thereof and a cloud server are also provided.

Abstract: In using an application's drawing feature, users typically use connecting lines between graphical shapes to depict a relationship between the shapes. Drawing connecting lines between two or more graphical shapes within an application can be a time consuming, manual task. An application that automatically generates connecting lines between shapes, based on spatial relationships among the shapes, can reduce the amount of time for drawing a diagram. Functionality can be implemented to generate connecting lines between 1:n shapes based on proximity among the shapes and/or contact between shapes. Automatically generating connecting lines among shapes based on spatial relationships among the shapes allows generating of the connecting lines based on manipulation of shapes, which typically have a larger surface area than a line. Manipulating a larger surface area can be easier than manipulating a line.

Abstract: A structure of a solar cell. The structure of the solar cell includes a substrate, a graded layer and a semiconductor layer. The graded layer is disposed on the substrate. The graded layer is made from materials including the first material and the second material, and includes at least one thin film. One of the at least one thin film includes a mixture of at least the first material and the second material at a mixture ratio. The mixture forms a bandgap of the at least one thin film. The semiconductor layer is disposed on the graded layer.

Abstract: A structure of a solar cell is provided. The structure of the solar cell includes a substrate, a base and a plurality of nanostructures. The base is disposed on the substrate. The nanostructures are disposed on a surface of the base, or a surface of the base includes the nanostructures, so as to increase light absorption of the structure.

Abstract: In using an application's drawing feature, users typically use connecting lines between graphical shapes to depict a relationship between the shapes. Drawing connecting lines between two or more graphical shapes within an application can be a time consuming, manual task. An application that automatically generates connecting lines between shapes, based on spatial relationships among the shapes, can reduce the amount of time for drawing a diagram. Functionality can be implemented to generate connecting lines between 1:n shapes based on proximity among the shapes and/or contact between shapes. Automatically generating connecting lines among shapes based on spatial relationships among the shapes allows generating of the connecting lines based on manipulation of shapes, which typically have a larger surface area than a line. Manipulating a larger surface area can be easier than manipulating a line.

Abstract: A multicarrier direct-sequence code-division multiple-access (MC-DS/CDMA) communications system is provided. A code tree of two-dimensional orthogonal variable spreading factor (2D-OVSF) codes is then generated for the system. To generate the code tree, a set of existing M1×N1 2D-OVSF matrices, in the form of A(i)(M1×N1) for i={1, 2, . . . , K1} is selected as seed matrices. M1 represents the number of available frequency carriers in the MC-DS/CDMA system, and N1 represents a spreading factor code length. Another set of existing M2×N2 2D-OVSF matrices, in the form of B2(i)(M2×N2) for i={1, 2, . . . , K2} is then selected as mapping matrices. The mapping matrices are used to generate corresponding children matrices.

Abstract: A code tree of two-dimensional orthogonal variable spreading factor (2D-OVSF) code matrices for a multicarrier direct-sequence code-division multiple-access (MC-DS/CDMA) communications system is generated by providing two sets of 2×2 orthogonal matrices {A(1)(2×2), A(2)(2×2)} and {B(1)(2×2), B(2)(2×2)}. The first set of 2×2 matrices is used to generate a pair of sibling nodes in the code tree that respectively represent matrices A(1)(2×2?) and A(2)(2×2?) by iterating the relationship: A(1)(2×21+?)=[A(1)(2×2?)A(2)(2×2?)], The matrices A(1)(2×2?) and A(2)(2×2?) are A(2)(2×21+?)=[A(1)(2×2?)?A(2)(2×2?)]. used to generate a child node of one of the sibling nodes. The child node contains an M×N matrix, which is found by iterating the relationship: A(i?1)(O×P)=[B(1)(2×2){circle around (×)}A(i/2)(0/2×P/2)] where {circle around (×)} indicates a Kronecker product.

Abstract: An in-situ performed method utilizing a pure H2O plasma to remove a layer of resist from a substrate or wafer without substantially accumulating charges thereon. Also, in-situ performed methods utilizing a pure H2O plasma or a pure H2O vapor to release or remove charges from a surface or surfaces of a substrate or wafer that have accumulated during one or more IC fabrication processes.

Abstract: A code tree of two-dimensional orthogonal variable spreading factor (2D-OVSF) code matrices for a multicarrier direct-sequence code-division multiple-access (MC-DS/CDMA) communications system is generated by providing two sets of 2×2 orthogonal matrices {A(1)(2×2), A(2)(2×2)} and {B(1)(2×2), B(2)(2×2)}.

Abstract: A multicarrier direct-sequence code-division multiple-access (MC-DS/CDMA) communications system is provided. A code tree of two-dimensional orthogonal variable spreading factor (2D-OVSF) codes is then generated for the system. To generate the code tree, a set of existing M1×N1 2D-OVSF matrices, in the form of A(i)(M1×N1) for i={1, 2, . . . , K1 } is selected as seed matrices. M1 represents the number of available frequency carriers in the MC-DS/CDMA system, and N1 represents a spreading factor code length. Another set of existing M2×N2 2D-OVSF matrices, in the form of B2(i)(M2×N2) for i={1, 2, . . . , K2} is then selected as mapping matrices. The mapping matrices are used to generate corresponding children matrices.