Abstract: Local patterning and metallization of semiconductor structures using a laser beam, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a method of fabricating a solar cell includes providing a substrate having an intervening layer thereon. The method also includes locating a metal foil over the intervening layer. The method also includes exposing the metal foil to a laser beam, wherein exposing the metal foil to the laser beam forms openings in the intervening layer and forms a plurality of conductive contact structures electrically connected to portions of the substrate exposed by the openings.

Abstract: A method for fabricating a solar cell and the and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. The method can include: providing a solar cell having metal foil having first regions that are electrically connected to semiconductor regions on a substrate at a plurality of conductive contact structures, and second regions; locating a carrier sheet over the second regions; bonding the carrier sheet to the second regions; and removing the carrier sheet from the substrate to selectively remove the second regions of the metal foil.

Abstract: A method for fabricating a solar cell and the and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. The method can include: providing a solar cell having metal foil having first regions that are electrically connected to semiconductor regions on a substrate at a plurality of conductive contact structures, and second regions; locating a carrier sheet over the second regions; bonding the carrier sheet to the second regions; and removing the carrier sheet from the substrate to selectively remove the second regions of the metal foil.

Abstract: Strings of solar cells having laser assisted metallization conductive contact structures, and their methods of manufacture, are described. For example, a solar cell string includes a first solar cell having a front side and a back side, and one or more laser assisted metallization conductive contact structures electrically connecting a first metal foil to the back side of the first solar cell. The solar cell string also includes a second solar cell having a front side and a back side, and one or more laser assisted metallization conductive contact structures electrically connecting a second metal foil to the back side of the second solar cell. The solar cell string also includes a conductive interconnect coupling the first and second solar cells, the conductive interconnect including a strain relief feature.

Abstract: A data anonymity method and a data anonymity system are provided. The data anonymity method includes the following steps. A data set comprising a plurality of direct-identifiers, a plurality of quasi-identifiers and a plurality of event logs each of which includes an activity and a timestamp is obtained. A content of each of the direct-identifiers is replaced by a pseudonym. The quasi-identifiers are classified, via a group-by algorithm with k-anonymity, as a plurality of equivalence classes. The activities corresponding to each of the direct-identifiers are linked according to the timestamps to obtain a plurality of event sequences. A similarity hierarchy tree is obtained according to a plurality of edit distances among the event sequences. The event sequences are grouped according to the similarity hierarchy tree with k-anonymity to obtain at least one group. The event sequences which are in the group are generalized.

Abstract: A method for fabricating a solar cell and the and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. The method can include: providing a solar cell having metal foil having first regions that are electrically connected to semiconductor regions on a substrate at a plurality of conductive contact structures, and second regions; locating a carrier sheet over the second regions; bonding the carrier sheet to the second regions; and removing the carrier sheet from the substrate to selectively remove the second regions of the metal foil.

Abstract: Metallization of semiconductor substrates using a laser beam, and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, solar cell circuit, solar cell strings, and solar cell arrays are described. A solar cell string can include a plurality of solar cells. The plurality of solar cells can include a substrate and a plurality of semiconductor regions disposed in or above the substrate. A plurality of conductive contact structures is electrically connected to the plurality semiconductor regions. Each conductive contact structure includes a locally deposited metal portion disposed in contact with a corresponding one of the semiconductor regions.

Abstract: Local metallization of semiconductor substrates using a laser beam, and the resulting structures, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a solar cell includes a substrate and a plurality of semiconductor regions disposed in or above the substrate. A plurality of conductive contact structures is electrically connected to the plurality of semiconductor regions. Each conductive contact structure includes a locally deposited metal portion disposed in contact with a corresponding a semiconductor region.

Abstract: A system for fabricating solar cells. The system including one or more of: a laser assisted metallization patterning unit adapted to expose a metal foil located over a substrate to a laser beam to form a conductive contact structure comprising a locally deposited metal on the substrate; a debris removal unit adapted to remove debris from a top surface of a metal foil that is attached to a top surface of a substrate; a carrier attachment unit adapted to attach a carrier to one the top surface of the metal foil; and a metal removal unit adapted to remove the carrier and at least a portion of the metal foil.

Abstract: A method of fabricating solar cell, solar laminate and/or solar module string is provided. The method may include: locating a metal foil over a plurality of semiconductor substrates; exposing the metal foil to laser beam over selected portions of the plurality of semiconductor substrates, wherein exposing the metal foil to the laser beam forms a plurality conductive contact structures having of locally deposited metal portion electrically connecting the metal foil to the semiconductor substrates at the selected portions; and selectively removing portions of the metal foil, wherein remaining portions of the metal foil extend between at least two of the plurality of semiconductor substrates.

Abstract: Local patterning and metallization of semiconductor structures using a laser beam, e.g., micro-electronic devices, semiconductor substrates and/or solar cells, are described. For example, a method of fabricating a solar cell includes providing a substrate having an intervening layer thereon. The method also includes locating a metal foil over the intervening layer. The method also includes exposing the metal foil to a laser beam, wherein exposing the metal foil to the laser beam forms openings in the intervening layer and forms a plurality of conductive contact structures electrically connected to portions of the substrate exposed by the openings.

Abstract: A silicon device, has a plurality of crystalline silicon regions. One crystalline silicon region is a doped crystalline silicon region. Deactivating some or all of the dopant atoms in the doped crystalline silicon region is achieved by introducing hydrogen atoms into the doped 5 crystalline silicon region, whereby the hydrogen coulombicly bonds with some or all of the dopant atoms to deactivate the respective dopant atoms. Deactivated dopant atoms may be reactivated by heating and illuminating the doped crystalline silicon region to break at least some of the dopant-hydrogen bonds while maintaining conditions to create a high concentration of neutral hydrogen atoms whereby 10 some of the hydrogen atoms diffuse from the doped crystalline silicon region without rebinding to the dopant atoms.

Abstract: A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C.

Abstract: A method is provided for the processing of a device having a crystalline silicon region containing an internal hydrogen source. The method comprises: i) applying encapsulating material to each of the front and rear surfaces of the device to form a lamination; ii) applying pressure to the lamination and heating the lamination to bond the encapsulating material to the device; and iii) cooling the device, where the heating step or cooling step or both are completed under illumination.

Abstract: A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C.

Abstract: A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) providing one or more hydrogen sources accessible by each surface of the device; and iii) heating the device, or a local region of the device to at least 40° C.

Abstract: A silicon device, has a plurality of crystalline silicon regions. One crystalline silicon region is a doped crystalline silicon region. Deactivating some or all of the dopant atoms in the doped crystalline silicon region is achieved by introducing hydrogen atoms into the doped 5 crystalline silicon region, whereby the hydrogen coulombicly bonds with some or all of the dopant atoms to deactivate the respective dopant atoms. Deactivated dopant atoms may be reactivated by heating and illuminating the doped crystalline silicon region to break at least some of the dopant-hydrogen bonds while maintaining conditions to create a high concentration of neutral hydrogen atoms whereby 10 some of the hydrogen atoms diffuse from the doped crystalline silicon region without rebinding to the dopant atoms.

Abstract: A dielectric, structure and a method of forming a dielectric structure for a rear surface of a silicon solar cell are provided. The method comprises forming a first dielectric layer over the rear surface of the silicon solar cell, and then depositing a layer of metal such as aluminum over the first dielectric layer. The metal layer is then anodized to form a porous layer and a material layer is deposited over a surface of the porous layer such that the material deposits on the surface of the porous layer without contacting the silicon surface.

Abstract: A method is provided for the processing of a device having a crystalline silicon region containing an internal hydrogen source. The method comprises: i) applying encapsulating material to each of the front and rear surfaces of the device to form a lamination; ii) applying pressure to the lamination and heating the lamination to bond the encapsulating material to the device; and iii) cooling the device, where the heating step or cooling step or both are completed under illumination.

Abstract: A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C.