Abstract: Fabricating a photomask includes forming a protection layer over a substrate. A plurality of multilayers of reflecting films are formed over the protection layer. A capping layer is formed over the plurality of multilayers. An absorption layer is formed over capping layer. A first photoresist layer is formed over portions of absorption layer. Portions of the first photoresist layer and absorption layer are patterned, forming first openings in absorption layer. The first openings expose portions of the capping layer. Remaining portions of first photoresist layer are removed and a second photoresist layer is formed over portions of absorption layer. The second photoresist layer covers at least the first openings. Portions of the absorption layer and capping layer and plurality of multilayer of reflecting films not covered by the second photoresist layer are patterned, forming second openings. The second openings expose portions of protection layer and second photoresist layer is removed.

Abstract: The present disclosure provides a semiconductor device that includes a semiconductor fin disposed over a substrate, an isolation structure at least partially surrounding the fin, an epitaxial source/drain (S/D) feature disposed over the semiconductor fin, where an extended portion of the epitaxial S/D feature extends over the isolation structure, and a silicide layer disposed on the epitaxial S/D feature, where the silicide layer covers top, bottom, sidewall, front, and back surfaces of the extended portion of the S/D feature.

Abstract: A package comprises a substrate including a first surface, and an upper conductive layer arranged on the first surface, a first light-emitting unit arranged on the upper conductive layer, and comprises a first semiconductor layer, a first substrate, a first light-emitting surface and a first side wall, a second light-emitting unit, which is arranged on the upper conductive layer, and comprises a second light-emitting surface and a second side wall, a light-transmitting layer arranged on the first surface and covers the upper conductive layer, the first light-emitting unit, and the second light-emitting unit, a light-absorbing layer, which is arranged between the substrate and the light-transmitting layer in a continuous configuration of separating the first light-emitting unit and the second light-emitting unit from each other, and a reflective wall arranged on the first side wall, wherein a height of the reflective wall is lower than that of the light-absorbing layer.

Abstract: A method includes forming a test pattern and a reference pattern in an absorption layer of a photomask structure. The test pattern has a first trench and a second trench, the reference pattern has a third trench and a fourth trench, the test pattern and the reference pattern have substantially the same dimension in a top view, and the second trench is deeper than the first trench, the third trench, and the fourth trench. The method further includes emitting a light beam to the test pattern to obtain a first interference pattern reflected from the test pattern, emitting the light beam to the reference pattern to obtain a second interference pattern reflected from the reference pattern; and comparing the first interference pattern with the second interference pattern to obtain a measured complex refractive index of the absorption layer.

Abstract: A shock-absorbing device includes a first holding member, a second holding member movably assembled to the first holding member, and an elastic element disposed between the first and the second holding member with two ends of the elastic element pressing against the two holding members. With the elastic element, an elastic shock-absorbing space is defined between the first and the second holding member.

Abstract: A rotary locking device includes a thumbturn member, a latch member held to and turnable by the thumbturn member, and a limiting structure provided on the thumbturn member for movably connecting to or interfering with the thumbturn member. The rotary locking device can be mounted on a first object, and the thumbturn member can be turned for the latch member to turn to a position to lock a second object, so that the first and the second object are quickly and easily locked to each other. The limiting structure limits an angle by which the thumbturn member or the latch member can be turned. When the thumbturn member is turned reversely, the latch member is brought to unlock the second object, so that the first and the second object are quickly and easily separated from each other.

Abstract: A shock-absorbing device includes a first holding member, a second holding member movably assembled to the first holding member, and an elastic element disposed between the first and the second holding member with two ends of the elastic element pressing against the two holding members. With the elastic element, an elastic shock-absorbing space is defined between the first and the second holding member.