Abstract: A method for manufacturing contact holes with spacers between a substrate and an interconnect layer or between two interconnect layers is disclosed. The method produces contact holes with a relatively uniform CD from top to bottom, i.e. without a rounded top, thereby increasing the reliability of the contact hole. A dielectric layer, antireflective layer and patterned photoresist layer are deposited in sequence over a substrate or bottom interconnect layer. Contact holes are etched into the antireflective layer and the dielectric layer exposing a surface of the substrate or bottom interconnect layer. A spacer material is deposited onto the antireflective layer and into the contact holes. The spacer material is then anisotropically etched from the antireflective layer, leaving the spacer material in the contact holes. The etching process preferably removes the spacer material at a faster rate than the antireflective coating layer.

Abstract: A method for forming a plurality of contact openings on a semiconductor substrate using an etch stop layer is disclosed herein. A semiconductor substrate is provided having a plurality of memory devices and a plurality of isolation regions formed thereon. A silicon oxide layer is formed on the plurality of semiconductor devices, the plurality of isolation regions, and the semiconductor substrate. An etch stop layer is formed on the silicon oxide layer followed by depositing a thick interlevel dielectric layer. A photoresist layer is pattern on the interlevel dielectric layer to define contact regions. A first dry etching process is performed to create a plurality of contact openings with different dimension in the interlevel dielectric layer until exposing portions of the etch stop layer. A second dry etching process is performed to create the plurality of contact openings through the etch stop layer.