Abstract: Disclosed herein is a compound and its use for the prognosis or diagnosis of neurodegenerative diseases. The compound has the structure of formula (I), According to embodiments of the present disclosure, the neurodegenerative disease may be an Alzheimer's disease (AD), Parkinson disease (PD), Huntington's disease (HD), frontotemporal dementia (FTD), Friedreich's ataxia, age-related macular degeneration, or Creutzfeldt-Jakob disease.

Abstract: A metal adhesion layer may be formed on a bottom and a sidewall of a trench prior to formation of a metal plug in the trench. A plasma may be used to modify the phase composition of the metal adhesion layer to increase adhesion between the metal adhesion layer and the metal plug. In particular, the plasma may cause a shift or transformation of the phase composition of the metal adhesion layer to cause the metal adhesion layer to be composed of a (111) dominant phase. The (111) dominant phase of the metal adhesion layer increases adhesion between the metal adhesion layer.

Abstract: An approach is provided for separating a selected component from a plurality of components in a multi-component medium. A multi-component medium is created, including thermally conductive layer into which a template of patterned thermally conductive elements that are thermally separated from each other, a thermally active adhesion layer in thermal communication with the thermally conductive template, and a set of components attached to the thermally active adhesion layer in substantially the same pattern as thermally conductive template. The medium allows a selected component to be released by applying energy to a selected thermally conductive element corresponding to the selected component, inducing a temperature differential reducing the adhesion of the thermally active adhesion layer, without releasing non-selected components.

Abstract: An approach is provided for separating a selected component from a plurality of components in a multi-component medium. A multi-component medium is created, including thermally conductive layer into which a template of patterned thermally conductive elements that are thermally separated from each other, a thermally active adhesion layer in thermal communication with the thermally conductive template, and a set of components attached to the thermally active adhesion layer in substantially the same pattern as thermally conductive template. The medium allows a selected component to be released by applying energy to a selected thermally conductive element corresponding to the selected component, inducing a temperature differential reducing the adhesion of the thermally active adhesion layer, without releasing non-selected components.

Abstract: Disclosed herein is a system and method of adjusting a location of components on a receiving substrate. The method includes transferring a set of components from a donor substrate to a receiving substrate and stretching the receiving substrate in at least one direction so the components are in their final location. The system includes a set of components on a receiving substrate; and wherein the receiving substrate is configured to adjust the location of the set of components via elastic stretching in at least one direction.

Abstract: Siloxane epoxy materials employed as redistribution layers in electronic packaging and coatings for imprinting lithography, and methods of fabrication are disclosed.

Abstract: A method of bonding two substrates and a corresponding bonded structure are described. The method includes forming a first nanostructure layer comprising nanostructures on a first substrate. A second substrate is contacted with the first nanostructure layer. The first nanostructure layer is heated at a heating temperature below a melting temperature of the first and second substrates. The first nanostructure layer is cooled after heating the nanostructure layer such that the first substrate is bonded to the second substrate.

Abstract: Structures employing siloxane epoxy polymers as diffusion barriers adjacent conductive metal layers are disclosed. The siloxane epoxy polymers exhibit excellent adhesion to conductive metals, such as copper, and provide an increase in the electromigration lifetime of metal lines. In addition, the siloxane epoxy polymers have dielectric constants less then 3, and thus, provide improved performance over conventional diffusion barriers.

Abstract: Low dielectric compositions and methods of use thereof in integrated circuits are disclosed. The low dielectric compositions are derived from carbosilane polymers and oligomers containing imbedded sila- or disilacyclobutane rings and, after heating to induce cross-linking, may be used as an interlayer dielectric as well as a capping layer within an integrated circuit.

Abstract: Semiconductor devices employing siloxane epoxy polymers as low-? dielectric films are disclosed. The devices include a semiconductor substrate, one or more metal layers or structures and one or more dielectric films, wherein at least one dielectric film in the devices is a siloxane epoxy polymer. Use of siloxane epoxy polymers is advantageous, in part, because the polymers adhere well to metals and have dielectric constants as low as 1.8. Thus, the disclosed semiconductor devices offer much better performance than devices fabricated using conventional dielectric materials. Furthermore, the siloxane epoxy polymer dielectrics are fully curable at low temperatures, exhibit low leakage currents, and remain stable at temperatures greater than 400° C.

Abstract: Structures employing siloxane epoxy polymers as diffusion barriers adjacent conductive metal layers are disclosed. The siloxane epoxy polymers exhibit excellent adhesion to conductive metals, such as copper, and provide an increase in the electromigration lifetime of metal lines. In addition, the siloxane epoxy polymers have dielectric constants less then 3, and thus, provide improved performance over conventional diffusion barriers.

Abstract: Semiconductor devices employing siloxane epoxy polymers as low-? dielectric films are disclosed. The devices include a semiconductor substrate, one or more metal layers or structures and one or more dielectric films, wherein at least one dielectric film in the devices is a siloxane epoxy polymer. Use of siloxane epoxy polymers is advantageous, in part, because the polymers adhere well to metals and have dielectric constants as low as 1.8. Thus, the disclosed semiconductor devices offer much better performance than devices fabricated using conventional dielectric materials. Furthermore, the siloxane epoxy polymer dielectrics are fully curable at low temperatures, exhibit low leakage currents, and remain stable at temperatures greater than 400° C.