Abstract: The present invention relates to a method of forming a barrier metal layer for a hot Al plug and its structure and more particularly to remarkably ameliorate the performance of a barrier metal layer preventing Al metal used as an interconnection layer from diffusing into a silicon substrate. A barrier metal layer according to the present invention is a stacked structure comprising a top layer of Tungsten (W) formed by a Chemical Vapor Deposition (CVD) method and a bottom layer of TiN. Then, a Al interconnection layer deposited at high temperature fills a plug and finishes a plug structure having advantages of low manufacturing cost and full prevention of Al diffusion.

Abstract: A method for forming a metal plug is provided. The method includes: a) forming a metal contact window in a substrate having an oxide layer; b) forming a barrier layer over a top surface of the oxide layer and a wall defining the metal contact window; c) forming a metal layer covering the barrier layer and filling up the metal contact window; d) removing a portion of the metal layer located above the barrier layer covering the top surface of the oxide layer by a chemical mechanical polishing method; and e) removing the barrier layer covering the top surface of the oxide layer by an etching method.

Abstract: The present invention relates to a method of a sequencial WSi/.alpha.-Si sputtering process, more particularly to a method of in-situ wafer cooling for a sequencial WSi/.alpha.-Si sputtering process. A sputtering process of WSi and a sputtering process of .alpha.-Si are finished in a multi-chamber sputtering apparatus according to the invention; meanwhile, a wafer is cooled down by bolwing of inert gas before a process of sputtering .alpha.-Si starts. Thus, compared to traditional art of finishing WSi/.alpha.-Si sputtering in two apparatus, partial time of vacuuming and venting required in a sputtering process is saved according to the invention, thereby, shortening the production cycle time, reducing the possibility of wafer contamination, and suppressing the fabricating cost.

Abstract: A method for cleaning a substrate prior to tungsten deposition is disclosed, said substrate having via holes and trenches lines thereon. The method includes steps ofproviding a solution of hydroxylamine sulfate; dipping said substrate in said solution; and agitating said solution by an agitating device.

Abstract: A method is described for forming tapered contact via holes in large scale integrated circuit structures which avoids the formation of a re-entrance profile. The re-entrance profile can form at the entrance to the contact via hole when a dry etch is used as a first etching step by redepositing material removed during the dry etch at the entrance of the contact via hole. This re-entrance profile makes the angle of entrance into the contact via hole greater than 90.degree. and the step coverage of metal filling the hole poor. This invention uses wet etching with a greater lateral etch rate than vertical etch rate as a first etching step in the formation of the contact via hole and avoids the formation of the re-entrance profile. The edges of the resulting contact via hole are smooth and the entrance angle into the contact via hole is substantially less than 90.degree.. The step coverage of metal later filling the contact via hole is substantially improved.

Abstract: A method is described for making a tapered opening for an integrated circuit having a feature size of about one micrometer or less which will in due course be filled with a metallurgy conductor. An integrated circuit structure is provided having device elements within a semiconductor substrate and multilayer insulating layers thereover. A resist masking layer is formed over the said multilayer insulating layer having openings therein in the areas where the said openings are desired. The multilayer insulating layer is anisotropically etched through a first thickness to form a first opening using the resist masking layer as a mask. A second thickness portion of the multilayer insulating layer is isotropically etched to substantially uniformly enlarge and taper the first opening while using the unchanged resist layer.