Abstract: A non-volatile memory device and fabricating method therefor are provided. The non-volatile memory device includes a substrate, a first insulating layer, a conductor layer, a second insulating layer, and charge storage units. Herein, the substrate, the first insulating layer, and the conductor layer are formed, respectively. Then, the second insulating layer is disposed on the sidewalls of the first insulating layer and the conductor layer, and multiple charge storage units are formed within the second insulating film. As such, the charge storage units separated from one another effectively to improve the phenomenon of crosstalk, and provide multi-bit storage capability. Furthermore, a multi-layer charge storage structure perpendicular to and parallel to the substrate is used to enlarge the charge storage capacity.