Abstract: A method and a system for processing data, and a storage device controller are provided. In the present method, a storage device is provided, and the storage device is coupled to a host. The method also includes, when the host gives a write-in command and the write-in command includes a logical accessing address and a first data, determining whether the logical accessing address is one of logical accessing addresses of file system information. When the logical accessing address is one of the logical accessing addresses of the file system information, the storage device writes a second data into the storage device at a predetermined time, and the second data is different from the first data.

Abstract: A method and a system for processing data, and a storage device controller are provided. In the present method, a storage device is provided, and the storage device is coupled to a host. The method also includes, when the host gives a write-in command and the write-in command includes a logical accessing address and a first data, determining whether the logical accessing address is one of logical accessing addresses of file system information. When the logical accessing address is one of the logical accessing addresses of the file system information, the storage device writes a second data into the storage device at a predetermined time, and the second data is different from the first data.

Abstract: A method of forming a strain-causing layer for MOS transistors is provided, which is applied to a substrate having a plurality of gate structures of the MOS transistors thereon. A non-conformal stressed film that is thicker on the gate structures than between the gate structures is formed over the substrate. The non-conformal stressed film is then etched, without an etching mask thereon, to remove portions thereof between the gate structures and disconnect the stressed film between the gate structures. At least one extra stressed film may be further formed over the substrate, wherein each extra stressed film has the same type of stress as the above stressed film and is connected or disconnected between the gate structures.

Abstract: A capacitor structure has a first electrode and a second electrode, which does not electrically connect to the first electrode. The first electrode has a plurality of first meshed conductive structures. The first meshed conductive structures have the same layout pattern, and are electrically connected to each other. The second electrode has a plurality of second meshed conductive structures. The second meshed conductive structures have the same layout pattern, and are electrically connected to each other. The first meshed conductive structures and the second meshed conductive structures are alternately stacked.

Abstract: A method for fabricating a photodiode of an image sensor includes providing a substrate having a first conductive type and photo sensing regions, respectively forming photodiodes in the photo sensing region, and performing an ion implantation to form an implanted reflective layer having a second conductive type under the plurality of photodiodes for reflecting light and creating depletion regions in the substrate.

Abstract: A method of forming a strain-causing layer for MOS transistors is provided, which is applied to a substrate having a plurality of gate structures of the MOS transistors thereon. A non-conformal stressed film that is thicker on the gate structures than between the gate structures is formed over the substrate. The non-conformal stressed film is then etched, without an etching mask thereon, to remove portions thereof between the gate structures and disconnect the stressed film between the gate structures. At least one extra stressed film may be further formed over the substrate, wherein each extra stressed film has the same type of stress as the above stressed film and is connected or disconnected between the gate structures.

Abstract: A polishing head used for CMP is described, including a retaining ring that is for engaging with a wafer, a membrane and an edge control ring. The membrane includes a bottom part for engaging with the wafer, and a lip part contiguous with the bottom part. The edge control ring is disposed between the retaining ring and the membrane, including a bottom part that has an abutting surface. The abutting surface of the edge control ring contacts with the external surface of the lip part of the membrane when the membrane is not inflated.