Abstract: A package includes a frontside redistribution layer (RDL) structure, a semiconductor die on the frontside RDL structure, and a backside RDL structure on the semiconductor die including a first RDL, and a backside connector extending from a distal side of the first RDL and including a tapered portion having a width that decreases in a direction away from the first RDL, wherein the tapered portion includes a contact surface at an end of the tapered portion. A method of forming the package may include forming the backside redistribution layer (RDL) structure, attaching a semiconductor die to the backside RDL structure, forming an encapsulation layer around the semiconductor die on the backside RDL structure, and forming a frontside RDL structure on the semiconductor die and the encapsulation layer.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: A package structure includes a redistribution structure and a core substrate. The redistribution structure includes a plurality of connection pads. The core substrate is disposed on the redistribution structure and electrically connected to the plurality of connection pads. The core substrate includes a first interconnection layer and a plurality of conductive terminals. The first interconnection layer has a first region, a second region surrounding the first region, and a third region surrounding the second region, and includes a plurality of bonding pads located in the first region, the second region and the third region. The conductive terminals are electrically connecting the plurality of bonding pads to the plurality of connection pads of the redistribution structure, wherein the plurality of conductive terminals located over the first region, the second region and the third region of the first interconnection layer have different heights.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a redistribution structure, conductive joints, conductive terminals, a circuit substrate, and an insulating encapsulation. The redistribution structure includes a first side and a second side opposite to the first side, wherein trenches are located on the second side of the redistribution structure and extend to an edge of the second side of the redistribution structure. The conductive joints are disposed over the first side of the redistribution structure. The conductive terminals are disposed over the second side of the redistribution structure. The circuit substrate electrically coupled to the redistribution structure through the conductive joints. The insulating encapsulation is disposed on the first side of the redistribution structure to cover the circuit substrate.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a redistribution structure, conductive joints, conductive terminals, a circuit substrate, and an insulating encapsulation. The redistribution structure includes a first side and a second side opposite to the first side, wherein trenches are located on the second side of the redistribution structure and extend to an edge of the second side of the redistribution structure. The conductive joints are disposed over the first side of the redistribution structure. The conductive terminals are disposed over the second side of the redistribution structure. The circuit substrate electrically coupled to the redistribution structure through the conductive joints. The insulating encapsulation is disposed on the first side of the redistribution structure to cover the circuit substrate.

Abstract: A package structure includes a redistribution structure and a core substrate. The redistribution structure includes a plurality of connection pads. The core substrate is disposed on the redistribution structure and electrically connected to the plurality of connection pads. The core substrate includes a first interconnection layer and a plurality of conductive terminals. The first interconnection layer has a first region, a second region surrounding the first region, and a third region surrounding the second region, and includes a plurality of bonding pads located in the first region, the second region and the third region. The conductive terminals are electrically connecting the plurality of bonding pads to the plurality of connection pads of the redistribution structure, wherein the plurality of conductive terminals located over the first region, the second region and the third region of the first interconnection layer have different heights.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a redistribution structure, conductive joints, conductive terminals, a circuit substrate, and an insulating encapsulation. The redistribution structure includes a first side and a second side opposite to the first side, wherein trenches are located on the second side of the redistribution structure and extend to an edge of the second side of the redistribution structure. The conductive joints are disposed over the first side of the redistribution structure. The conductive terminals are disposed over the second side of the redistribution structure. The circuit substrate electrically coupled to the redistribution structure through the conductive joints. The insulating encapsulation is disposed on the first side of the redistribution structure to cover the circuit substrate.