Abstract: An aggregation of semiconductor devices comprises a first layer, a second layer adhered to the first layer, and a plurality of semiconductor devices arranged between the first layer and the second layer to form a shape, wherein the shape comprises a curve and a mark, and the first layer is flexible.

Abstract: An aggregation of semiconductor devices comprises a first layer, a second layer adhered to the first layer, and a plurality of semiconductor devices arranged between the first layer and the second layer to form a shape, wherein the shape comprises a curve and a mark, and the first layer is flexible.

Abstract: A method of manufacturing an aggregation of semiconductor devices comprising the steps of providing a first layer; sequentially addressing and adhering a plurality of semiconductor devices to the first layer to form a shape having a curve; providing a second layer; and adhering the second layer to the first layer.

Abstract: A method of fabricating an optoelectronic device, comprises: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming a supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing a first energy into the substrate after forming the supporting layer; and cleaving the substrate.

Abstract: A method of manufacturing an aggregation of semiconductor devices comprising the steps of providing a first layer; sequentially addressing and adhering a plurality of semiconductor devices to the first layer to form a shape having a curve; providing a second layer; and adhering the second layer to the first layer.

Abstract: A method of fabricating an optoelectronic device, comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming a supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing a first energy into the substrate after forming the supporting layer; and cleaving the substrate.

Abstract: An aggregation of semiconductor devices, comprising: a first layer comprising a first surface and a second surface; a second layer comprising a first region and a second region; and a plurality of semiconductor devices disposed between the first layer and the second region wherein a shape of the second region comprises a curve and a mark.

Abstract: A method of fabricating an optoelectronic device, comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming a supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing a first energy into the substrate, wherein the supporting layer is formed before forming the plurality of first modified regions; forming an oxide layer on the first major surface of the substrate; and cleaving the substrate along the plurality of first modified regions.

Abstract: An aggregation of semiconductor devices, comprising: a first layer comprising a first surface and a second surface; a second layer comprising a first region and a second region; and a plurality of semiconductor devices disposed between the first layer and the second region wherein a shape of the second region comprises a curve and a mark.

Abstract: A method of fabricating an optoelectronic device, comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming an supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing an first energy into the substrate; forming an oxide layer on the first major surface of the substrate; and cleaving the substrate along the plurality of the first modified regions.