Abstract: A light-emitting element is provided, including a semiconductor structure, a reflective structure, first insulating structures, a conductive structure, and first and second pads. The reflective structure is disposed on the semiconductor structure. The first insulating structure includes first and second insulating portions covering first and second portions respectively, and a gap exposes a third portion between the first and second portions. The conductive structure includes first and second conductive portion. The first conductive portion is disposed on the first insulating portion to contact the semiconductor structure. The second conductive portion is disposed on the second insulating portion to contact the third portion through the gap. The first and second pads are respectively disposed on the first and second conductive portions. Each of the structures below the first and second pads are in flat-type bonding to enhance stress resistance.

Abstract: A light-emitting element is provided, including a semiconductor structure, a reflective structure, first and second insulating structures, a conductive structure, and first and second pads. The reflective structure is disposed on the semiconductor structure. The first insulating structure includes first and second protrusions covering first and second portions respectively, and a first recession exposes a third portion between the first and second portions. The conductive structure includes first and second conductive portion. The first conductive portion is disposed on the first protrusion to contact the semiconductor structure. The second conductive portion is disposed on the second protrusion to contact the third portion through the first recession. The first and second pads are respectively disposed on the first and second conductive portions. Each of the structures below the first and second pads are in flat-type bonding to enhance stress resistance.

Abstract: The invention provides a substrate structure used for manufacturing a light-emitting diode and a method for manufacturing the light-emitting diode. The substrate structure includes a substrate having a first surface and a second surface opposite to the first surface and a plurality of grooving structure formed on the first surface of the substrate. The light-emitting diode is formed on the first surface of the substrate.

Abstract: A Light emitting diode (LED) chip includes a substrate, an N-type semiconductor layer, a luminous layer, a P-type semiconductor layer, an N-type electrode layer and a P-type electrode layer. The N-type semiconductor layer is mounted on the substrate. The luminous layer is mounted on the N-type semiconductor layer. The P-type semiconductor layer is mounted on the luminous layer. The N-type electrode layer is mounted on the N-type semiconductor layer. The P-type electrode layer is mounted on the P-type semiconductor layer, and includes a plurality of enclosed circuit patterns. These enclosed circuit patterns respectively encompass different parts of the N-type electrode layer.