Patents by Inventor Pei-Ting Chiu

Pei-Ting Chiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11778839
    Abstract: Provided is a perovskite film including crystal grains with a crystalline structure of [A][B][X]3.n[C], wherein [A], [B], [X], [C] and n are as defined in the specification. The present disclosure further provides a precursor composition of perovskite film, method for producing of perovskite film, and semiconductor element including such films, as described above. With the optimal lattice arrangement, the perovskite film shows the effects of small surface roughness, and the semiconductor element thereof can thus achieve high efficiency and stability even with large area of film formation, thereby indeed having prospect of the application.
    Type: Grant
    Filed: December 15, 2020
    Date of Patent: October 3, 2023
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Kuo-Wei Huang, Yung-Liang Tung, Jung-Pin Chiou, Pei-Ting Chiu, Shih-Hsiung Wu
  • Publication number: 20230102199
    Abstract: Provided is a method for preparing lead iodide, which controls the crystal form of lead iodide through temperature, including: dissolving a lead compound in a first acid solution and adding an iodine compound to form a reaction solution including the first lead iodide; and heating the reaction solution to a temperature of 60° C. or more and standing at a constant temperature, to obtain the second lead iodide, wherein a peak intensity of the (003) crystal plane of the second lead iodide is greater than or equal to a peak intensity of the (110) crystal plane. Provided is also a method for preparing the perovskite film.
    Type: Application
    Filed: January 12, 2022
    Publication date: March 30, 2023
    Inventors: Pei-Ting Chiu, Yung-Liang Tung, Shih-Hsiung Wu, Kuo-Wei Huang, Jung-Pin Chiou, Jen-An Chen, Qiao-Zhi Guan
  • Publication number: 20230079784
    Abstract: Provided is a method for testing a perovskite precursor solution, including: taking a perovskite precursor solution containing a plurality of dispersed perovskite colloids as a sample to perform liquid analysis, thereby obtaining an analysis information; and determining whether the perovskite precursor solution is a good product based on obtained analysis information from the liquid analysis, wherein the analysis information is at least one selected from the group consisting of element content of the colloid, element distribution, colloid size, and colloid appearance, thereby a feasible and effective testing method is defined through the correlation between the perovskite precursor colloid and the perovskite.
    Type: Application
    Filed: November 17, 2021
    Publication date: March 16, 2023
    Inventors: Kuo-Wei Huang, Pei-Ting Chiu, Yung-Liang Tung, Po-Tsung Hsieh, Tai-Fu Lin
  • Publication number: 20220123242
    Abstract: Provided is a perovskite film including crystal grains with a crystalline structure of [A][B][X]3.n[C], wherein [A], [B], [X], [C] and n are as defined in the specification. The present disclosure further provides a precursor composition of perovskite film, method for producing of perovskite film, and semiconductor element including such films, as described above. With the optimal lattice arrangement, the perovskite film shows the effects of small surface roughness, and the semiconductor element thereof can thus achieve high efficiency and stability even with large area of film formation, thereby indeed having prospect of the application.
    Type: Application
    Filed: December 15, 2020
    Publication date: April 21, 2022
    Inventors: Kuo-Wei Huang, Yung-Liang Tung, Jung-Pin Chiou, Pei-Ting Chiu, Shih-Hsiung Wu
  • Patent number: 11271157
    Abstract: Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure. (RNH3)2MA(n?1)M1nX(3n+1)??formula (1), wherein the definitions of R, MA, M1, X, and n are as defined above.
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: March 8, 2022
    Assignee: Industrial Technology Research Institute
    Inventors: Kuo-Wei Huang, Yung-Liang Tung, Shih-Hsiung Wu, Jen-An Chen, Pei-Ting Chiu, Yu-Hung Chen
  • Publication number: 20220069221
    Abstract: Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure. (RNH3)2MA(n?1)M1nX(3n+1)??formula (1), wherein the definitions of R, MA, M1, X, and n are as defined above.
    Type: Application
    Filed: September 29, 2020
    Publication date: March 3, 2022
    Applicant: Industrial Technology Research Institute
    Inventors: Kuo-Wei Huang, Yung-Liang Tung, Shih-Hsiung Wu, Jen-An Chen, Pei-Ting Chiu, Yu-Hung Chen
  • Publication number: 20210175425
    Abstract: Provided are a method for forming a perovskite layer and a method for forming a structure comprising a perovskite layer. The method for forming a perovskite layer includes the following steps: coating a perovskite precursor material on a substrate; and performing a heating treatment to the substrate; and irradiating the perovskite precursor material with infrared light.
    Type: Application
    Filed: December 10, 2019
    Publication date: June 10, 2021
    Applicant: Industrial Technology Research Institute
    Inventors: Shih-Hsiung Wu, Yung-Liang Tung, Kuo-Wei Huang, Pei-Ting Chiu, Hung-Ru Hsu, Jia-Ming Lin