Abstract: An absorber and a method of forming an absorber. The absorber may include a semiconductor absorption structure doped with dopants of a first conductivity type. The absorber may also include a semiconductor substrate doped with dopants of a second conductivity type different from the first conductivity type. The absorber may further include a dielectric layer between the semiconductor absorption structure and the semiconductor substrate. The absorber may additionally include a buried semiconductor structure included in a cavity of the dielectric layer, the buried semiconductor structure doped with dopants of the first conductivity type.

Abstract: A transport mechanism of a server rack including a carrier plate, a server rack disposed and fixed onto a top surface of the carrier plate, and multiple supporting assemblies respectively stacked onto a bottom surface of the carrier plate is provided. Each of the supporting assemblies has at least one cushion member. The cushion member has at least one hollow portion, and an opening of the hollow portion is exposed to an environment. The stiffness of the cushion member is smaller than the stiffness of the carrier plate. A pallet structure is also provided.

Abstract: An embodiment is a semiconductor structure. The semiconductor structure includes a fin on a substrate. A gate structure is over the fin. A source/drain is in the fin proximate the gate structure. The source/drain includes a bottom layer, a supportive layer over the bottom layer, and a top layer over the supportive layer. The supportive layer has a different property than the bottom layer and the top layer, such as a different material, a different natural lattice constant, a different dopant concentration, and/or a different alloy percent content.

Abstract: A method for manufacturing a semiconductor device is provided. The method comprises steps as follows. At least one trench is provided in a low-k dielectric layer on a substrate. The trench is filled with a copper (Cu) film. Pure cobalt (Co) is deposited on a surface of the Cu film by introducing a flow of a carrier gas carrying a Co-containing precursor and a reducing agent onto the surface of the Cu film. The flowrate of the flow is within a range from 5 to 19 sccm.

Abstract: A use of a compound in obtaining cytoskeleton and cell elongation is disclosed, the compound is 7-chloro-6-piperidin-1-yl-quinoline-5,8-dione with a chemical formula of C14H13CIN2O2, is designated as PT-262. The PT-262 can induce cell elongation by stabilization of the F-actin and induction of the abnormal actin polymerization in cancer cells, further, the PT-262 possesses antitumor activity and can block survival pathway of the cancer cells, resulting in cancer cells apoptosis, and the PT-262 can induce growth arrest and inhibition of cell cycle. PT-262 stabilizes cancer cells cytoskeleton that results in an irreversible cell elongation, decreases the levels of cyclin B1 and phospho-cdc2 proteins, and inhibits the survival signal pathway of Ras-ERK proteins. The PT-262 also inhibits the mitochondrial membrane potential and induces the caspase-3 activation and apoptosis in the cancer cells.

Abstract: A compound capable of cytoskeleton and induction of cell elongation, 7-chloro-6-piperidin-1-yl-quinoline-5,8-dione with a chemical formula of C14H13CIN2O2, is designated as PT-262. The PT-262 can induce cell elongation by stabilization of the F-actin and induction of the abnormal actin polymerization in cancer cells, further, the PT-262 possesses antitumor activity and can block survival pathway of the cancer cells, resulting in cancer cells apoptosis, and the PT-262 can induce growth arrest and inhibition of cell cycle. PT-262 stabilizes cancer cells cytoskeleton that results in an irreversible cell elongation, decreases the levels of cyclin B1 and phospho-cdc2 proteins, and inhibits the survival signal pathway of Ras-ERK proteins. The PT-262 also inhibits the mitochondrial membrane potential and induces the caspase-3 activation and apoptosis in the cancer cells.