Patents by Inventor Pei Ting Lo

Pei Ting Lo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130312813
    Abstract: A solar cell includes a silicon semiconductor substrate, a composite multifunctional protective film, a plurality of front electrodes and a plurality of back electrodes. The silicon semiconductor substrate has a roughened first surface. A depth of the doped layer arranged under the first surface ranges from 200 nm to 1000 nm. A surface doping concentration of the doped layer ranges from 1×1019 to 5×1020 atoms/cm3. The composite multifunctional protective film is disposed above the doped layer. The composite multifunctional protective film has a plurality of layers, so as to reduce reflectance of incident light. A layer thickness of a layer closest to the doped layer among these layers is less than 40 nm. The plurality of front electrodes penetrates the composite multifunctional protective film and is disposed on the doped layer. The plurality of back electrodes is disposed on a second surface of the silicon semiconductor substrate.
    Type: Application
    Filed: May 8, 2013
    Publication date: November 28, 2013
    Applicant: NEO SOLAR POWER CORP.
    Inventors: SHANG-YU CHUANG, PEI-TING LO, YU-WEI TAI, WEI-MING CHEN
  • Patent number: 7888160
    Abstract: A process of manufacturing a solar cell is disclosed. The process comprises steps of (a) providing a semiconductor substrate, (b) forming a dielectric layer with amorphous silicon structure on the semiconductor substrate, (c) partially removing the dielectric layer with amorphous silicon structure to expose parts of the semiconductor substrate, (d) simultaneously forming a heavily doped region on a surface of the exposed semiconductor substrate and a lightly doped region on a surface of the unexposed semiconductor substrate using the dielectric layer with amorphous silicon structure as a translucent barrier layer, (e) removing the dielectric layer with amorphous silicon structure, (f) forming an anti-reflection coating on the semiconductor substrate, and (g) forming a first electrode on the anti-reflection coating and coupled with the heavily doped region.
    Type: Grant
    Filed: December 11, 2008
    Date of Patent: February 15, 2011
    Assignee: Mosel Vitelic Inc.
    Inventors: Chang Hong Shen, Pei Ting Lo
  • Publication number: 20100015750
    Abstract: A process of manufacturing a solar cell is disclosed. The process comprises steps of (a) providing a semiconductor substrate, (b) forming a dielectric layer with amorphous silicon structure on the semiconductor substrate, (c) partially removing the dielectric layer with amorphous silicon structure to expose parts of the semiconductor substrate, (d) simultaneously forming a heavily doped region on a surface of the exposed semiconductor substrate and a lightly doped region on a surface of the unexposed semiconductor substrate using the dielectric layer with amorphous silicon structure as a translucent barrier layer, (e) removing the dielectric layer with amorphous silicon structure, (f) forming an anti-reflection coating on the semiconductor substrate, and (g) forming a first electrode on the anti-reflection coating and coupled with the heavily doped region.
    Type: Application
    Filed: December 11, 2008
    Publication date: January 21, 2010
    Applicant: MOSEL VITELIC INC.
    Inventors: Chang Hong Shen, Pei Ting Lo