Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: The present invention provides a semiconductor memory device including a substrate, a plurality of capacitors and a supporting layer disposed on the substrate, wherein each of the capacitors is connected with at least one of the adjacent capacitors through the supporting layer. Each of the capacitors includes first electrodes, a high-k dielectric layer and a second electrode, and the high-k dielectric layer is disposed between the first electrodes and the second electrode. Due to the supporting layer directly contacts the high-k dielectric layer through a surface thereof, and the high-k dielectric layer completely covers the surface, the second electrode may be formed directly within openings with an enlarged dimension. Accordingly, the process difficulty of performing the deposition and etching processes within the openings may be reduced, and the capacitance of the capacitors is further increased.

Abstract: The present invention provides a semiconductor memory device including a substrate, a plurality of capacitors and a supporting layer disposed on the substrate, wherein each of the capacitors is connected with at least one of the adjacent capacitors through the supporting layer. Each of the capacitors includes first electrodes, a high-k dielectric layer and a second electrode, and the high-k dielectric layer is disposed between the first electrodes and the second electrode. Due to the supporting layer directly contacts the high-k dielectric layer through a surface thereof, and the high-k dielectric layer completely covers the surface, the second electrode may be formed directly within openings with an enlarged dimension. Accordingly, the process difficulty of performing the deposition and etching processes within the openings may be reduced, and the capacitance of the capacitors is further increased.

Abstract: The present invention provides a semiconductor memory device and a fabricating method thereof. The semiconductor memory device includes a substrate, a plurality of capacitors and a supporting layer disposed on the substrate, wherein each of the capacitors is connected with at least one of the adjacent capacitors through the supporting layer. Each of the capacitors includes first electrodes, a high-k dielectric layer and a second electrode, and the high-k dielectric layer is disposed between the first electrodes and the second electrode. Due to the supporting layer directly contacts the high-k dielectric layer through a surface thereof, and the high-k dielectric layer completely covers the surface, the second electrode may be formed directly within openings with an enlarged dimension. Accordingly, the process difficulty of performing the deposition and etching processes within the openings may be reduced, and the capacitance of the capacitors is further increased.

Abstract: The present invention provides a semiconductor memory device and a fabricating method thereof. The semiconductor memory device includes a substrate, a plurality of capacitors and a supporting layer disposed on the substrate, wherein each of the capacitors is connected with at least one of the adjacent capacitors through the supporting layer. Each of the capacitors includes first electrodes, a high-k dielectric layer and a second electrode, and the high-k dielectric layer is disposed between the first electrodes and the second electrode. Due to the supporting layer directly contacts the high-k dielectric layer through a surface thereof, and the high-k dielectric layer completely covers the surface, the second electrode may be formed directly within openings with an enlarged dimension. Accordingly, the process difficulty of performing the deposition and etching processes within the openings may be reduced, and the capacitance of the capacitors is further increased.

Abstract: Provided is a data transmission system including analog image frame buffer, line analog-to-digital converter, line buffer memory, and an interface. First, the analog image frame buffer stores the image data lines generated from the image sensor as analog signals, and then the line analog digital converter which is electrically connected to the analog image frame buffer converts the image data lines from analog signals to digital signals. Then, the image data lines converted into digital signals are stored in one of the line buffer memories. Then, according to the user's needs, the image data line of the digital signal is temporarily stored in another line buffer memory. Finally, according to the instructions of the master device, the interface outputs the image data lines of digital signals according to the conversion order of the line analog to digital converter.

Abstract: Provided is a data transmission system including analog image frame buffer, line analog-to-digital converter, line buffer memory, and an interface. First, the analog image frame buffer stores the image data lines generated from the image sensor as analog signals, and then the line analog digital converter which is electrically connected to the analog image frame buffer converts the image data lines from analog signals to digital signals. Then, the image data lines converted into digital signals are stored in one of the line buffer memories. Then, according to the user's needs, the image data line of the digital signal is temporarily stored in another line buffer memory. Finally, according to the instructions of the master device, the interface outputs the image data lines of digital signals according to the conversion order of the line analog to digital converter.

Abstract: A driving system and method for liquid crystal display is disclosed. The system stores only the driving values corresponding to specific grayscale values of pixels on a current frame and specific grayscale values of pixels on a previous frame. The stored driving values are then used by an operation processing unit of the system to calculate out driving values to be applied to the current frame. Moreover, the system is provided with a logic judging unit for preventing the noises of the frame from being overdriven.

Abstract: A method for generating an over-drive grey level for driving a pixel includes providing a corresponding over-drive function according to an original grey level for the pixel in the previous frame, and generating the over-drive grey level according to the corresponding over-drive function and the original grey level for the pixel in the current frame.

Abstract: A method for data compressing includes compressing an original data with DPCM, compressing again the compressed data with Huffman's encoding for generating a bit-stream, and storing the bit-stream.

Abstract: A programmable system-on-chip (SOC) apparatus is disclosed. After connecting with a computer host, the apparatus temporarily stored boot loader codes into a volatile memory originally installed in the apparatus. Further, during the whole updating firmware procedure, no burner is required. Accordingly, the invention not only saves the hardware cost of both a non-volatile memory and the burner, but also simplifies the operation procedure.

Abstract: The invention discloses a gamma image correction method and device that employs an improved interpolating operation, comprising receiving an original image data point; retrieving p conversion values (p is larger than 2) from a memory unit according to the original image data point; and arithmetically processing the p conversion values for generating a gamma corrected image parameter value from the original image data point wherein the original image data point is a N bits data, the memory unit contains 2k conversion values and N is lager than k.

Abstract: A method for generating an over-drive grey level for driving a pixel includes providing a corresponding over-drive function according to an original grey level for the pixel in the previous frame, and generating the over-drive grey level according to the corresponding over-drive function and the original grey level for the pixel in the current frame.

Abstract: A method for data compressing includes compressing an original data with DPCM, compressing again the compressed data with Huffman's encoding for generating a bit-stream, and storing the bit-stream.

Abstract: A method for generating over-drive data includes storing a reduced over-drive table and a predetermined weighting table, finding first and second reference values from the reduced over-drive table according to received previous current pixel values, finding first and second weighting values from the predetermined weighting table according to the received current pixel value, and generating a corresponding over-drive data according to the first and the second reference values, and the first and the second weighting values.

Abstract: A driving system and method for liquid crystal display is disclosed. The system stores only the driving values corresponding to specific grayscale values of pixels on a current frame and specific grayscale values of pixels on a previous frame. The stored driving values are then used by an operation processing unit of the system to calculate out driving values to be applied to the current frame. Moreover, the system is provided with a logic judging unit for preventing the noises of the frame from being overdriven.

Abstract: The invention discloses a gamma image correction method and device that employs an improved interpolating operation, comprising receiving an original image data point; retrieving p conversion values (p is larger than 2) from a memory unit according to the original image data point; and arithmetically processing the p conversion values for generating a gamma corrected image parameter value from the original image data point wherein the original image data point is a N bits data, the memory unit contains 2k conversion values and N is lager than k.

Abstract: A programmable system-on-chip (SOC) apparatus is disclosed. After connecting with a computer host, the apparatus temporarily stored boot loader codes into a volatile memory originally installed in the apparatus. Further, during the whole updating firmware procedure, no burner is required. Accordingly, the invention not only saves the hardware cost of both a non-volatile memory and the burner, but also simplifies the operation procedure.