Patents by Inventor Pei-Tsen Shiu

Pei-Tsen Shiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20240304657
    Abstract: A semiconductor device includes a substrate, a first gate, a plurality of second gates and a resistor. The substrate is defined with an active region and a resistor region. The first gate is disposed in the active region. The first gate has a first length extending along a first direction and a second length extending along a second direction. The plurality of second gates are disposed in the resistor region. Each of the second gates has a third length extending along the first direction and a fourth length extending along the second direction. The first length is equal to the third length, and the second length is equal to the fourth length. The resistor is disposed on the plurality of second gates.
    Type: Application
    Filed: March 29, 2023
    Publication date: September 12, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Yi-Chun Teng, Ming-Che Tsai, Ping-Chia Shih, Yi-Chang Huang, Wen-Lin Wang, Yu-Fan Hu, Ssu-Yin Liu, Yu-Nong Chen, Pei-Tsen Shiu, Cheng-Tzung Tsai