Abstract: An apparatus and a method for decoding a 3D map, and an encoded bitstream of a 3D map are provided. The apparatus for decoding a 3D map includes a transmitter and a decompressor. The transmitter is configured to receive a bitstream of a 3D map, where the 3D map includes a plurality of 3D map points. The decompressor is configured to decompress the bitstream of the 3D map to obtain reconstructed data of the 3D map, where the reconstructed data of the 3D map includes reconstructed data of the plurality of 3D map points. In this application, the decompressor end may support decompression of compressed data of the 3D map, to support compression/decompression of data of the 3D map.

Abstract: A three-dimensional (3D) map compression method includes performing compaction processing on a to-be-encoded descriptor to obtain a first compact representation of the to-be-encoded descriptor, where the to-be-encoded descriptor corresponds to at least one 3D map point on a 3D map. A compact representation of at least one reference descriptor corresponding to the to-be-encoded descriptor is obtained, followed by obtaining a second compact representation of the to-be-encoded descriptor based on the first compact representation of the to-be-encoded descriptor and the compact representation of the at least one reference descriptor and encapsulating the second compact representation to obtain a bitstream of the 3D map.

Abstract: An apparatus and a method for encoding a 3D map are provided. The apparatus for encoding a 3D map includes a compression module (51) and a transmission module (52). The compression module (51) is configured to compress data of a 3D map to obtain a bitstream of the 3D map, where the 3D map includes a plurality of 3D map points, and the data of the 3D map includes data of the plurality of 3D map points. The transmission module (52) is configured to transmit the bitstream of the 3D map. With the use of the apparatus, a data volume of a 3D map can be reduced, thereby reducing transmission bandwidth and improving transmission efficiency.

Abstract: It is described a network attack detection method. A topology analysis on network is conducted to obtain a probing path set containing at least one probing path. A first probing path contained in the probing path set is probed by using a probing pattern to obtain a performance metric of the first probing path. It is determined whether the first probing path is subjected to network attack according to the performance metric and a control performance metric.

Abstract: It is described a network attack detection method. A topology analysis on network is conducted to obtain a probing path set containing at least one probing path. A first probing path contained in the probing path set is probed by using a probing pattern to obtain a performance metric of the first probing path. It is determined whether the first probing path is subjected to network attack according to the performance metric and a control performance metric.

Abstract: It is described a network attack detection method. A topology analysis on network is conducted to obtain a probing path set containing at least one probing path. A first probing path contained in the probing path set is probed by using a probing pattern to obtain a performance metric of the first probing path. It is determined whether the first probing path is subjected to network attack according to the performance metric and a control performance metric.

Abstract: A color detection system includes a motherboard, a detection device, and a detection card. The detection device comprises a display unit and a memory unit storing a first color frequency setting value. The display unit displays a first color according to the color frequency setting value. The detection card includes a color sensor, a microcontroller, and a first connector. The color sensor generates a first color frequency current value after sensing the first color from the display unit and sends the first color frequency current value to the microcontroller. The microcontroller sends the first color frequency current value to the motherboard And the motherboard outputs detection success information to the display unit when a first difference value between the first color frequency current value and the first color frequency setting value is less than a predetermined value. The display unit displays the detection success information.

Abstract: It is described a network attack detection method. A topology analysis on network is conducted to obtain a probing path set containing at least one probing path. A first probing path contained in the probing path set is probed by using a probing pattern to obtain a performance metric of the first probing path. It is determined whether the first probing path is subjected to network attack according to the performance metric and a control performance metric.

Abstract: A negative active material, a method for preparing the negative active material and a lithium ion battery comprising the same are provided. The negative active material may comprise: a core, an intermediate layer consisting of a first material and an outmost layer consisting of a second material, which is coated on a surface of the intermediate layer. The first material may be at least one selected from the group consisting of the elements that form alloys with lithium, and the second material may be at least one selected from the group consisting of transition metal oxides, transition metal nitrides and transition metal sulfides.

Abstract: A negative active material, a method of preparing the negative active material and a lithium ion battery comprising the negative active material are provided. The negative active material may comprise: a core (1) composed of a carbon material; and a plurality of composite materials (2) attached to a surface of the core (1), each of which may comprise a first material (21) and a second material (22) coated on the first material (21), in which the first material (21) may be at least one selected from the elements that may form an alloy with lithium, and the second material (22) may be at least one selected from the group consisting of transition metal oxides, transition metal nitrides and transition metal sulfides.

Abstract: A color detection system includes a motherboard, a detection device, and a detection card. The detection device comprises a display unit and a memory unit storing a first color frequency setting value. The display unit displays a first color according to the color frequency setting value. The detection card includes a color sensor, a microcontroller, and a first connector. The color sensor generates a first color frequency current value after sensing the first color from the display unit and sends the first color frequency current value to the microcontroller. The microcontroller sends the first color frequency current value to the motherboard And the motherboard outputs detection success information to the display unit when a first difference value between the first color frequency current value and the first color frequency setting value is less than a predetermined value. The display unit displays the detection success information.

Abstract: A negative active material, a method of preparing the negative active material and a lithium ion battery comprising the negative active material are provided. The negative active material may comprise: a core (1) composed of a carbon material; and a plurality of composite materials (2) attached to a surface of the core (1), each of which may comprise a first material (21) and a second material (22) coated on the first material (21), in which the first material (21) may be at least one selected from the elements that may form an alloy with lithium, and the second material (22) may be at least one selected from the group consisting of transition metal oxides, transition metal nitrides and transition metal sulfides.

Abstract: A negative active material, a method for preparing the negative active material and a lithium ion battery comprising the same are provided. The negative active material may comprise: a core, an intermediate layer consisting of a first material and an outmost layer consisting of a second material, which is coated on a surface of the intermediate layer. The first material may be at least one selected from the group consisting of the elements that form alloys with lithium, and the second material may be at least one selected from the group consisting of transition metal oxides, transition metal nitrides and transition metal sulfides.

Abstract: A liquid crystal display device reduces the color shift problem typically observed at wide viewing angles; the device includes a phase retardation compensation film, a biaxial compensation film, and a liquid crystal display panel between the two films. Refractive indexes of the phase retardation compensation film having a thickness d1 and the biaxial compensation film having a thickness d2 are nx1, ny1, nz1, nx2, ny2, and nz2 in a first, a second and a third directions perpendicular to each other. The third direction is parallel to the normal directions of the surfaces of the phase retardation compensation film and the biaxial compensation film. Optical compensation values of the phase retardation compensation film and the biaxial compensation film are Rth1 and Rth2 and derived from [(nx1+ny1)/2?nz1]×d1 and [(nx2+ny2)/2?nz2]×d2 respectively. Rth1 is not less than 50 nm, and the sum of Rth1 and Rth2 can be equal to 271 nm.

Abstract: A complementary metal-oxide-semiconductor (CMOS) device comprising a substrate, a first type of metal-oxide-semiconductor (MOS) transistor, a second type of MOS transistor, an etching stop layer, a first stress layer and a second stress layer is provided. The substrate has a first and a second active region. The first active region is isolated from the second active region through an isolation structure. The first type of MOS transistor is disposed in the first active region of the substrate and the second type of MOS transistor is disposed in the second active region of the substrate. The etching stop layer covers conformably the first type of MOS transistor, the second type of MOS transistor and the isolation structure. The first stress layer is disposed on the etching stop layer in the first active region and the second stress layer is disposed on the etching stop layer in the second active region.