Patents by Inventor PEI-WEN CHI

PEI-WEN CHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9406525
    Abstract: A method includes followings operations. A semiconductor substrate is provided. A photoresist is formed on the semiconductor substrate. Dopants are inserted into the photoresist to carbonize a portion of the photoresist. An etch steam is sprayed on the semiconductor substrate and the photoresist. A hole is formed at a surface of the photoresist by the etch steam. The etch steam is flowed into the hole so as to remove a portion of the photoresist at an interface between the semiconductor substrate and the photoresist. The photoresist is decorticated from the semiconductor substrate.
    Type: Grant
    Filed: November 15, 2013
    Date of Patent: August 2, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventors: Pei-Wen Chi, Hsueh-Chin Lu, Shin Hsien Liao, Hung-Hsin Liang
  • Publication number: 20150140829
    Abstract: A method includes followings operations. A semiconductor substrate is provided. A photoresist is formed on the semiconductor substrate. Dopants are inserted into the photoresist to carbonize a portion of the photoresist. An etch steam is sprayed on the semiconductor substrate and the photoresist. A hole is formed at a surface of the photoresist by the etch steam. The etch steam is flowed into the hole so as to remove a portion of the photoresist at an interface between the semiconductor substrate and the photoresist. The photoresist is decorticated from the semiconductor substrate.
    Type: Application
    Filed: November 15, 2013
    Publication date: May 21, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventors: PEI-WEN CHI, HSUEH-CHIN LU, SHIN HSIEN LIAO, HUNG-HSIN LIANG