Patents by Inventor Pei-Ying Lee

Pei-Ying Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250142719
    Abstract: A flexible circuit board designed for chip integration is provided. The flexible circuit board includes an insulating substrate, a conductive copper layer, a first tin layer, a second tin layer, and a first solder resist layer. The first tin layer has a first tin thickness, and the second tin layer has a greater second tin thickness. A first tin surface of the first tin layer and a second tin surface of the second tin layer are substantially level.
    Type: Application
    Filed: October 8, 2024
    Publication date: May 1, 2025
    Inventors: Chiu-Hong Lai, Wen Ping Hsu, Yi Ling Hsieh, Dong-Sheng Li, Yi Ren Chian, San Lee, Pei-Ying Lee, Ting-Yi Kuo
  • Patent number: 11503698
    Abstract: A flexible circuit board includes a flexible substrate, an electronic component and a heat spreader. The electronic component and the heat spreader are disposed on a top surface and a bottom surface of the flexible substrate, respectively. The heat spreader includes a copper layer which contains more than or equal to 50% copper grains by volume with (1,0,0) crystallographic orientation.
    Type: Grant
    Filed: October 5, 2021
    Date of Patent: November 15, 2022
    Assignee: Chipbond Technology Corporation
    Inventors: Yi-Ling Hsieh, Pei-Ying Lee, Dong-Sheng Li
  • Patent number: 8298328
    Abstract: A novel amorphous divalent metal ion salt for enhancing the manageability of a Portland cement and its application in dental field are disclosed. Typical formula (I), (II), or (III) of this amorphous metal ion salt are shown as following: M 2 + ? A x - ? B 2 - x - ( I ) M 2 + ? A y 2 - ? C ( 4 - y ) 4 2 - ( II ) M 2 + ? A z 3 - ? D ( 6 - z ) 9 3 - ( III ) wherein, M2+, A?, B?, C?2, D?3, x, y, and z are defined the same as the specification. A novel tooth filling material comprises: a Portland cement, a bone substitute substance, and an amorphous divalent metal ion salt with formula of (I), (II), or (III). In addition, a novel root canal filling material comprises: a Portland cement, a radiopaque substance, and an amorphous divalent metal ion salt with formula of (I), (II), or (III).
    Type: Grant
    Filed: December 1, 2009
    Date of Patent: October 30, 2012
    Assignee: Taipei Medical University
    Inventors: Jeng-Chang Yang, Pei-Ying Lee, Dian-Yu Ji, Nai-Chia Teng, Sung-Chih Hsieh, Sheng-Yang Lee
  • Publication number: 20100139524
    Abstract: A novel amorphous divalent metal ion salt for enhancing the manageability of a Portland cement and its application in dental field are disclosed. Typical formula (I), (II), or (III) of this amorphous metal ion salt are shown as following: M 2 + ? A x - ? B 2 - x - ( I ) M 2 + ? A y 2 - ? C ( 4 - y ) 4 2 - ( II ) M 2 + ? A z 3 - ? D ( 6 - z ) 9 3 - ( III ) wherein, M2+, A?, B?, C?2, D?3, x, y, and z are defined the same as the specification. A novel tooth filling material comprises: a Portland cement, a bone substitute substance, and an amorphous divalent metal ion salt with formula of (I), (II), or (III). In addition, a novel root canal filling material comprises: a Portland cement, a radiopaque substance, and an amorphous divalent metal ion salt with formula of (I), (II), or (III).
    Type: Application
    Filed: December 1, 2009
    Publication date: June 10, 2010
    Applicant: Taipei Medical University
    Inventors: Jeng-Chang Yang, Pei-Ying Lee, Dain-Yu Ji, Nain-Chia Teng, Sung-Chih Hsieh, Sheng-Yang Lee
  • Patent number: 6066541
    Abstract: A method for fabricating a cylindrical capacitor is provided. This invention uses a composite structure composed of stacked barrier/scarificing/mask layers to prevent the contact plug of the capacitor from being attacked by wet etchants. An insulating layer is formed over a substrate having a source region, a drain region, and a gate electrode. Then a barrier layer, a sacrificing layer and a mask layer are sequentially formed over the insulating layer. Next, a contact hole is formed over the source region and spacers are formed on the sidewalls of the contact hole. After a storage electrode of the capacitor is formed and exposed portions of the mask layer are removed, the sacrificing layer is isotropically etched using the spacers and the barrier layer as stopping layers. Thereafter, a capacitor dielectric layer and an opposite electrode are formed over the storage electrode thereby completing the capacitor.
    Type: Grant
    Filed: April 27, 1998
    Date of Patent: May 23, 2000
    Assignee: Nanya Technology Corporation
    Inventors: Ming-Teng Hsieh, Tsu-An Lin, Pei-Ying Lee, Hsing-Chuan Tsai