Abstract: Methods of forming semiconductor devices are provided. The methods include: forming a trench in a substrate, wherein the trench includes a defect protruding from a bottom surface of the trench; forming a flowable material on the substrate to at least partially cover the defect; performing an etching process to reduce the height of the defect; and removing the flowable material.

Abstract: A spindle shaft device including a shaft, a first torque sensor, and a second torque sensor. The shaft extends along an axial direction and comprises a first side portion, a second side portion, and a central portion located between the first side portion and the second side portion. The central portion has a central torsional rigidity with respect to the axial direction. The first side portion has a first torsional rigidity with respect to the axial direction. The second side portion has a second torsional rigidity with respect to the axial direction. The first torsional rigidity is smaller than the central torsional rigidity. The second torsional rigidity is smaller than the central torsional rigidity. The first torque sensor is disposed on the first side portion. The second torque sensor is disposed on the second side portion.

Abstract: Methods of forming semiconductor devices are provided. The methods include: forming a trench in a substrate, wherein the trench includes a defect protruding from a bottom surface of the trench; forming a flowable material on the substrate to at least partially cover the defect; performing an etching process to reduce the height of the defect; and removing the flowable material.

Abstract: A spindle shaft device including a shaft, a first torque sensor, and a second torque sensor. The shaft extends along an axial direction and comprises a first side portion, a second side portion, and a central portion located between the first side portion and the second side portion. The central portion has a central torsional rigidity with respect to the axial direction. The first side portion has a first torsional rigidity with respect to the axial direction. The second side portion has a second torsional rigidity with respect to the axial direction. The first torsional rigidity is smaller than the central torsional rigidity. The second torsional rigidity is smaller than the central torsional rigidity. The first torque sensor is disposed on the first side portion. The second torque sensor is disposed on the second side portion.

Abstract: A method for manufacturing at least one light emitting diode (LED) includes epitaxying at least one light emitting diode (LED) structure on a growth substrate; forming at least one supporting layer on the LED structure; temporarily adhering the supporting layer to a carrier substrate through an adhesive layer, in which the supporting layer has a Young's modulus greater than that of the adhesive layer; and removing the growth substrate from the LED structure.

Abstract: A heat dissipation assembly includes a pressing unit and a heat dissipation module. The pressing unit includes a pressing plate, a plurality of elastic cantilevers and contacting members. The pressing plate can be secured on a bottom plate so that a heat source can be sandwiched between the pressing plate and the bottom plate. The elastic cantilevers are respectively disposed on the pressing plate and protruded outwards from the pressing plate to be suspended in midair. The contacting members are respectively disposed on the elastic cantilevers for abutting the bottom plate. The heat dissipation module is fixedly connected to the pressing plate and a carrier member for thermally guiding the heat source.

Abstract: A micro-light emitting diode (micro-LED) device includes a receiving substrate and a micro-LED. The micro-LED includes a first type semiconductor layer, a second type semiconductor layer, a current controlling layer, at least one reflective layer, and at least one first electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling layer is joined with one of the first type semiconductor layer and the second type semiconductor layer, the current controlling layer having at least one opening therein. The reflective layer electrically is coupled with the first type semiconductor layer. The first electrode is disposed on a surface of the reflective layer facing the receiving substrate. The first electrode forms an adhesive bonding system with the receiving substrate.

Abstract: A transfer head array includes a base substrate, an interlayer isolation layer, plural transfer heads, and at least one shielding layer. The interlayer isolation layer is disposed on the base substrate, and the interlayer isolation layer has a flat top surface facing away from the base substrate. The transfer heads are arranged on the interlayer isolation layer. The shielding layer is disposed in the interlayer isolation layer.

Abstract: A method for manufacturing a light-emitting diode (LED) includes plural steps as follows. A first type semiconductor layer is formed. A second type semiconductor layer is formed on the first type semiconductor layer. An impurity is implanted into a first portion of the second type semiconductor layer. The concentration of the impurity present in the first portion of the second type semiconductor layer is greater than the concentration of the impurity present in a second portion of the second type semiconductor layer after the implanting, such that the resistivity of the first portion of the second type semiconductor layer is greater than the resistivity of the second portion of the second type semiconductor layer.

Abstract: A heat dissipation assembly includes a pressing unit and a heat dissipation module. The pressing unit includes a pressing plate, a plurality of elastic cantilevers and contact members. The pressing plate can be secured on a bottom plate so that a heat source can be sandwiched between the pressing plate and the bottom plate. The elastic cantilevers are respectively disposed on the pressing plate and protruded outwards from the pressing plate to be suspended in midair. The contact members are respectively disposed on the elastic cantilevers for abutting the bottom plate. The heat dissipation module is fixedly connected to the pressing plate and a carrier member for thermally guiding the heat source.

Abstract: A transfer head array includes a body and a plurality of transfer heads. The body has a first surface, a second surface opposite to the first surface, and a plurality of recesses. The first surface has at least one chucking region and at least one interference avoidance region, and the recesses are separated from each other and are disposed in the interference avoidance region. The transfer heads are disposed on the chucking region.

Abstract: A method for preparing a plurality of micro-devices for transfer includes temporarily bonding the micro-devices onto a carrier substrate; testing the micro-devices on the carrier substrate to determine if there is at least one first failed micro-device in the micro-devices; and removing the first failed micro-device from the carrier substrate.

Abstract: A method for preparing a plurality of micro-devices for transfer includes temporarily bonding the micro-devices onto a carrier substrate; testing the micro-devices on the carrier substrate to determine if there is at least one first failed micro-device in the micro-devices; and removing the first failed micro-device from the carrier substrate.

Abstract: A method for repairing a light-emitting diode (LED) lighting device is provided. The method includes the operations below. First, the LED lighting device is obtained. The LED lighting device includes a substrate having a top surface and a recess, a first bottom electrode disposed on the top surface and on a bottom surface of the recess, a second bottom electrode disposed on the top surface, an LED disposed in the recess and on the first bottom electrode, and a top transparent electrode disposed on the LED and the second bottom electrode. Then, a test is performed to know whether the first bottom electrode, the LED, the top transparent electrode, and the second bottom electrode form a part of an electrical loop. Finally, a connecting member is formed to electrically connect the first bottom electrode and the second bottom electrode if the electrical loop is open.

Abstract: A machine for transferring at least one micro-device includes a carrier and a transfer device. The carrier includes a pedestal, a substrate, and at least one first cushion layer. The substrate allows the micro-device to be temporarily disposed thereon. The first cushion layer is disposed between the pedestal and the substrate. The transfer device includes a transfer head holder, transfer head, and at least one second cushion layer. The transfer head holder moves at least along a z-axis substantially perpendicular to the substrate. The transfer head has a grip force on the micro-device. The second cushion layer is disposed between the transfer head holder and the transfer head.

Abstract: A method for manufacturing a light-emitting diode (LED) includes plural steps as follows. A first type semiconductor layer is formed. A second type semiconductor layer is formed on the first type semiconductor layer. An impurity is implanted into a first portion of the second type semiconductor layer. The concentration of the impurity present in the first portion of the second type semiconductor layer is greater than the concentration of the impurity present in a second portion of the second type semiconductor layer after the implanting, such that the resistivity of the first portion of the second type semiconductor layer is greater than the resistivity of the second portion of the second type semiconductor layer.

Abstract: The present disclosure illustrates a platform system for in vitro cell co-cultivation with automatic trapping function. The platform system aims to develop a bio-chip applied in cell culture systems, and has several features. The first feature is that this co-cultivation platform can construct a micro environment suitable for culture of various cells. The second feature is dynamic perfusion. The microfluidic system is used to dynamically replace the culture medium, in order to maintain an appropriate environment for the growth of cells. The third feature is the automatic trapping. The cells to be cultured can be trapped in a suitable location according to the flow resistance, so that the damaged on the cell caused by manual operation can be minimized.

Abstract: A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a current controlling structure, a first electrode, and a second electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling structure is joined with the first type semiconductor layer, and the current controlling structure has at least one current-injecting zone therein. The first electrode is electrically coupled with the first type semiconductor layer through the current-injecting zone of the current controlling structure. The second electrode is electrically coupled with the second type semiconductor layer.

Abstract: A method for manufacturing at least one light emitting diode (LED) includes epitaxying at least one light emitting diode (LED) structure on a growth substrate; forming at least one supporting layer on the LED structure; temporarily adhering the supporting layer to a carrier substrate through an adhesive layer, in which the supporting layer has a Young's modulus greater than that of the adhesive layer; and removing the growth substrate from the LED structure.

Abstract: A micro-light emitting diode (micro-LED) device includes a receiving substrate and a micro-LED. The micro-LED includes a first type semiconductor layer, a second type semiconductor layer, a current controlling layer, at least one reflective layer, and at least one first electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling layer is joined with one of the first type semiconductor layer and the second type semiconductor layer, the current controlling layer having at least one opening therein. The reflective layer electrically is coupled with the first type semiconductor layer. The first electrode is disposed on a surface of the reflective layer facing the receiving substrate. The first electrode forms an adhesive bonding system with the receiving substrate.