Abstract: A semiconductor device and a method of forming the same are provided. A semiconductor device according to an embodiment includes a P-type field effect transistor (PFET) and an N-type field effect transistor (NFET). The PFET includes a first gate structure formed over a substrate, a first spacer disposed on a sidewall of the first gate structure, and an unstrained spacer disposed on a sidewall of the first spacer. The NET includes a second gate structure formed over the substrate, the first spacer disposed on a sidewall of the second gate structure, and a strained spacer disposed on a sidewall of the first spacer.

Abstract: A semiconductor device and a method of forming the same are provided. A semiconductor device according to an embodiment includes a P-type field effect transistor (PFET) and an N-type field effect transistor (NFET). The PFET includes a first gate structure formed over a substrate, a first spacer disposed on a sidewall of the first gate structure, and an unstrained spacer disposed on a sidewall of the first spacer. The NET includes a second gate structure formed over the substrate, the first spacer disposed on a sidewall of the second gate structure, and a strained spacer disposed on a sidewall of the first spacer.

Abstract: Semiconductor devices and methods of forming the same are provided. An exemplary semiconductor device according to the present disclosure includes a first gate structure disposed over a first backside dielectric feature, a second gate structure disposed over a second backside dielectric feature, and a gate cut feature extending continuously from laterally between the first gate structure and the second gate structure to laterally between the first backside dielectric feature and the second backside dielectric feature. The gate cut feature includes an air gap laterally between the first gate structure and the second gate structure.

Abstract: A method includes forming a dielectric layer over a conductive feature, and etching the dielectric layer to form an opening. The conductive feature is exposed through the opening. The method further includes forming a tungsten liner in the opening, wherein the tungsten liner contacts sidewalls of the dielectric layer, depositing a tungsten layer to fill the opening, and planarizing the tungsten layer. Portions of the tungsten layer and the tungsten liner in the opening form a contact plug.

Abstract: A semiconductor device includes a first fin protruding upwardly from a substrate, a second fin protruding upwardly from the substrate, a first gate structure having a first portion that at least partially wraps around an upper portion of the first fin and a second portion that at least partially wraps around an upper portion of the second fin, a second gate structure having a portion that at least partially wraps around the upper portion of the first fin, and a dielectric feature having a first portion between the first and second portions of the first gate structure. In a lengthwise direction of the first fin, the dielectric feature has a second portion extending to a sidewall of the second gate structure.

Abstract: Semiconductor devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a frontside and a backside. The workpiece includes a substrate, a first plurality of channel members over a first portion of the substrate, a second plurality of channel members over a second portion of the substrate, an isolation feature sandwiched between the first and second portions of the substrate. The method also includes forming a joint gate structure to wrap around each of the first and second pluralities of channel members, forming a pilot opening in the isolation feature, extending the pilot opening through the join gate structure to form a gate cut opening that separates the joint gate structure into a first gate structure and a second gate structure, and depositing a dielectric material into the gate cut opening to form a gate cut feature.

Abstract: The present invention provides a method for enhancing PPAR? expression, comprising administering a subject in need thereof an effective amount of Lactobacillus gasseri PM-A0005, which was deposited under Budapest Treaty in the China Center for Type Culture Collection (CCTCC), China with Deposition No. M 207039.

Abstract: The present invention provides a method for reducing an allergic response and treating or preventing an allergic disease, comprising administering a subject in need thereof a therapeutically effective amount of the active ingredient for the treatment or the prevention of allergic diseases, wherein the active ingredient is glyceraldehyde-3-phosphate Dehydrogenase (G3PDH) or the functional variant or fragment thereof. The G3PDH can be isolated from Lactobacillus gasseri PM-A0005 (deposited under Budapest Treaty in the China Center for Type Culture Collection (CCTCC) with Deposit No: M 207039), as well as extract, fraction, and sub-fraction thereof.

Abstract: The present invention provides a method for enhancing PPAR? expression, comprising administering a subject in need thereof an effective amount of Lactobacillus gasseri PM-A0005, which was deposited under Budapest Treaty in the China Center for Type Culture Collection (CCTCC), China with Deposition No. M 207039.

Abstract: A biosensor applicable to an environment suitable for biosensing is provided, which is a solid-state element for performing detections in an aqueous environment. The biosensor at least includes a biosensing layer, a light-emitting diode and a photodiode. The biosensing layer causes changes in the light-emitting property thereof after absorbing, adsorbing and/or bonding with a biological substance released during in vivo signal transduction in an organism, and the rays of light generated by excitation of the light-emitting diode causes the biosensing layer to emit fluorescence. After the fluorescence is absorbed by the photodiode, it can be converted into an interpretable photocurrent signal. Afterwards, the meaning of the in vivo signal transduction can be understood by interpretation of the photocurrent signal.

Abstract: A template-based multimedia editor and editing method are disclosed. The editor includes a template module, a material database, a converting mechanism, and a user interface. The template module has an interactive area and at least one template element. The template module includes at least one adjustable template parameter and the template element has at least one adjustable template element parameter. The material database has at least one material data including at least one adjustable material parameter. The converting mechanism is adapted to process a predetermined algorithm. The user interface provides a preview area for a user to edit the template module and material data.