Abstract: Certain aspects provide an apparatus for signal processing in a neural network. The apparatus generally includes computation circuitry configured to perform a convolution operation, the computation circuitry having multiple input rows, and an activation buffer having multiple buffer segments coupled to the multiple the multiple input rows of the computation circuitry, respectively. In some aspects, each of the multiple buffer segments comprises a first multiplexer having a plurality of multiplexer inputs, and each of the plurality of multiplexer inputs of one of the first multiplexers on one of the multiple buffer segments is coupled to a data output of the activation buffer on another one of the multiple buffer segments.

Abstract: Embodiments of the present invention disclose a manufacturing method of an array substrate, an array substrate and a display. The manufacturing method comprises: forming a gate electrode of a TFT on a substrate; forming a metal oxide semiconductor thin film and a top metal thin film, and performing a mask process to the metal oxide semiconductor thin film and the top metal thin film, in order to form an active layer opposing the gate electrode and a source electrode and a drain electrode of the TFT respectively; and forming a passivation layer overlying the source electrode and the drain electrode, wherein during the mask process to the top metal thin film, a hydrogen peroxide-based etchant with a pH value between 6 and 8 is used to etch the top metal thin film.

Abstract: Embodiments of the present invention disclose a manufacturing method of an array substrate, an array substrate and a display. The manufacturing method comprises: forming a gate electrode of a TFT on a substrate; forming a metal oxide semiconductor thin film and a top metal thin film, and performing a mask process to the metal oxide semiconductor thin film and the top metal thin film, in order to form an active layer opposing the gate electrode and a source electrode and a drain electrode of the TFT respectively; and forming a passivation layer overlying the source electrode and the drain electrode, wherein during the mask process to the top metal thin film, a hydrogen peroxide-based etchant with a pH value between 6 and 8 is used to etch the top metal thin film.