Patents by Inventor Peiyu Zhu

Peiyu Zhu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method of array substrate, array substrate and display
    Patent number: 9099440
    Abstract: Embodiments of the present invention disclose a manufacturing method of an array substrate, an array substrate and a display. The manufacturing method comprises: forming a gate electrode of a TFT on a substrate; forming a metal oxide semiconductor thin film and a top metal thin film, and performing a mask process to the metal oxide semiconductor thin film and the top metal thin film, in order to form an active layer opposing the gate electrode and a source electrode and a drain electrode of the TFT respectively; and forming a passivation layer overlying the source electrode and the drain electrode, wherein during the mask process to the top metal thin film, a hydrogen peroxide-based etchant with a pH value between 6 and 8 is used to etch the top metal thin film.
    Type: Grant
    Filed: November 21, 2012
    Date of Patent: August 4, 2015
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Qi Yao, Tianming Dai, Feng Zhang, Zhanfeng Cao, Peiyu Zhu
  • MANUFACTURING METHOD OF ARRAY SUBSTRATE, ARRAY SUBSTRATE AND DISPLAY
    Publication number: 20140054586
    Abstract: Embodiments of the present invention disclose a manufacturing method of an array substrate, an array substrate and a display. The manufacturing method comprises: forming a gate electrode of a TFT on a substrate; forming a metal oxide semiconductor thin film and a top metal thin film, and performing a mask process to the metal oxide semiconductor thin film and the top metal thin film, in order to form an active layer opposing the gate electrode and a source electrode and a drain electrode of the TFT respectively; and forming a passivation layer overlying the source electrode and the drain electrode, wherein during the mask process to the top metal thin film, a hydrogen peroxide-based etchant with a pH value between 6 and 8 is used to etch the top metal thin film.
    Type: Application
    Filed: November 21, 2012
    Publication date: February 27, 2014
    Applicant: BOE TECHNOLOGY CO., LTD.
    Inventors: Qi Yao, Tianming Dai, Feng Zhang, Zhanfeng Cao, Peiyu Zhu