Abstract: A package includes a frontside redistribution layer (RDL) structure, a semiconductor die on the frontside RDL structure, and a backside RDL structure on the semiconductor die including a first RDL, and a backside connector extending from a distal side of the first RDL and including a tapered portion having a width that decreases in a direction away from the first RDL, wherein the tapered portion includes a contact surface at an end of the tapered portion. A method of forming the package may include forming the backside redistribution layer (RDL) structure, attaching a semiconductor die to the backside RDL structure, forming an encapsulation layer around the semiconductor die on the backside RDL structure, and forming a frontside RDL structure on the semiconductor die and the encapsulation layer.

Abstract: A p-aminobenzoic acid-producing microorganism is provided. The p-aminobenzoic acid-producing microorganism is obtained by a method for preparing a p-aminobenzoic acid-producing microorganism. The method for preparing a p-aminobenzoic acid-producing microorganism includes (a) performing an acclimation process on a source microorganism with at least one sulfonamide antibiotic to obtain at least one acclimatized microorganism and (b) screening out at least one p-aminobenzoic acid-producing microorganism from the at least one acclimatized microorganism, wherein the at least one p-aminobenzoic acid-producing microorganism has a higher p-aminobenzoic acid titer than the source microorganism.

Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.

Abstract: The embodiments described herein are directed to a method for reducing fin oxidation during the formation of fin isolation regions. The method includes providing a semiconductor substrate with an n-doped region and a p-doped region formed on a top portion of the semiconductor substrate; epitaxially growing a first layer on the p-doped region; epitaxially growing a second layer different from the first layer on the n-doped region; epitaxially growing a third layer on top surfaces of the first and second layers, where the third layer is thinner than the first and second layers. The method further includes etching the first, second, and third layers to form fin structures on the semiconductor substrate and forming an isolation region between the fin structures.

Abstract: A pixel circuit relating to an organic light emitting diode (OLED) is provided by the invention, and if the circuit configuration (5T1C) thereof collocates with suitable operation waveforms, the current flowing through an OLED in the OLED pixel circuit is not varied along with the variation of the conducting voltage (Voled_th) of the OLED in a long time driving current stress, and is not varied with the threshold voltage (Vth) shift of a TFT used for driving the OLED. Accordingly, not only the brightness decay of the OLED in the long time stress is mitigated or compensated, but also the brightness uniformity of the applied OLED display is substantially improved.