Abstract: An optical filter structure of an arbitrary combination of UV, R, G, B, and IR includes a substrate and a filter layer. The substrate is a wafer semiconductor sensor device and a product of light-transmitting device. The filter layer is formed on a surface of the substrate and is formed of a plurality of basic units arranged in an array. Each of the basic units includes a plurality of pixel filter films formed through vacuum coating, and the plurality of pixel filter films include an arbitrary combination of multiple ones of a UV pixel filter film, an R pixel filter film, a G pixel filter film, a B pixel filter film, and an IR pixel filter film, such that the plurality of pixel filter films allow light of corresponding wavelengths to pass therethrough.

Abstract: An infrared-cut filter structure is disclosed. The infrared-cut filter structure uses a glass substrate having an upper side and a lower side, with a first multilayer film formed on the upper side and a second multilayer film formed on the lower side so that the infrared-cut filter can effectively filter out infrared light and transmit visible light to produce normal colored images.

Abstract: An infrared-cut filter structure is disclosed. The infrared-cut filter structure uses a glass substrate having an upper side and a lower side, with a first multilayer film formed on the upper side and a second multilayer film formed on the lower side so that the infrared-cut filter can effectively filter out infrared light and transmit visible light to produce normal colored images.

Abstract: An infrared-cut filter structure is disclosed. The infrared-cut filter structure uses a glass substrate having an upper side and a lower side, with a first multilayer film formed on the upper side and a second multilayer film formed on the lower side so that the infrared-cut filter can effectively filter out infrared light and transmit visible light to produce normal colored images.

Abstract: The present invention discloses an optical bandpass filter structure targeting an arbitrary combination of the spectral ranges of R (red), G (green), B (blue) and IR (infrared) light, which comprises a substrate that is a wafer-based semiconductor sensing element, and a filter layer that is formed on one side of the substrate. The filter layer includes a plurality of basic units organized as a two-dimensional array, in which each of the basic units is composed of a plurality of pixel filter films fabricated by a vacuum coating method.

Abstract: An infrared bandpass filter structure is formed by alternately stacking a plurality of silicon aluminum hydride layers and a plurality of low-refractive-index layers. The plurality of low-refractive-index layers include oxide. The infrared bandpass filter structure has a pass band that at least partly overlaps the wavelength range of 800 nm-1600 nm. The pass band have a center wavelength, and the center wavelength has a magnitude of shift that is less than 11 nm when an incident angle changes from 0° to 30. An infrared bandpass filter includes the infrared bandpass filter structure formed on a first side surface of a substrate and an antireflection layer formed on a second side surface of the substrate that is at a side opposite to the first side surface.

Abstract: An infrared bandpass filter structure is formed by alternately stacking a plurality of silicon aluminum hydride layers and a plurality of low-refractive-index layers. The plurality of low-refractive-index layers include oxide. The infrared bandpass filter structure has a pass band that at least partly overlaps the wavelength range of 800 nm-1600 nm. The pass band have a center wavelength, and the center wavelength has a magnitude of shift that is less than 11 nm when an incident angle changes from 0° to 30. An infrared bandpass filter includes the infrared bandpass filter structure formed on a first side surface of a substrate and an antireflection layer formed on a second side surface of the substrate that is at a side opposite to the first side surface.