Patents by Inventor Peidong Yang

Peidong Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030121764
    Abstract: A nanowire switching device and method. The device has a nanowire structure comprising an elongated member having a cross-sectional area ranging from about 1 nanometers but less than about 500 nanometers, but can also be at other dimensions, which vary or are substantially constant or any combination of these. The device also has a first terminal coupled to a first portion of the nanowire structure; and a second terminal coupled to a second portion of the nanowire structure. The second portion of the nanowire structure is disposed spatially from the first portion of the nanowire structure. An active surface structure is coupled to the nanowire structure. The active surface structure extends from the first portion to the second portion along the elongated member.
    Type: Application
    Filed: December 27, 2001
    Publication date: July 3, 2003
    Applicant: The Regents of the University of California
    Inventors: Peidong Yang, Hannes Kind, Haoquan Yan, Matthew Law, Benjamin Messer
  • Patent number: 6541539
    Abstract: A low-cost, efficient method of preparing hierarchically ordered structures by combining, concurrently or sequentially, micromolding, latex templating, and cooperative self-assembly of hydrolyzed inorganic species and amphiphilic block copolymers.
    Type: Grant
    Filed: November 2, 1999
    Date of Patent: April 1, 2003
    Assignees: President and Fellows of Harvard College, The Regents of the University of California
    Inventors: Peidong Yang, Tao Deng, George M. Whitesides, Galen Stucky, Dongyaun Zhao, Bradley Chmelka, David Pine, Pingyun Feng
  • Publication number: 20020190415
    Abstract: A low-cost, efficient method of preparing hierarchically ordered structures by combining, concurrently or sequentially, micromolding, latex templating, and cooperative self-assembly of hydrolyzed inorganic species and amphiphilic block copolymers.
    Type: Application
    Filed: May 14, 2002
    Publication date: December 19, 2002
    Inventors: Peidong Yang, Tao Deng, George M. Whitesides, Galen Stucky, Dongyaun Zhao, Bradley Chmelka, David Pine, Pingyun Feng
  • Publication number: 20020175408
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Application
    Filed: March 29, 2002
    Publication date: November 28, 2002
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Arun Majumdar, Ali Shakouri, Timothy D. Sands, Peidong Yang, Samuel S. Mao, Richard E. Russo, Henning Feick, Eicke R. Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Publication number: 20020172820
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Application
    Filed: March 29, 2002
    Publication date: November 21, 2002
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Arun Majumdar, Ali Shakouri, Timothy D. Sands, Peidong Yang, Samuel S. Mao, Richard E. Russo, Henning Feick, Eicke R. Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Publication number: 20020065366
    Abstract: A method for preparing transparent mesostructured inorganic/block-copolymer composites or inorganic porous solids containing optically responsive species with selective optical, optoelectronic, and sensing properties resulting therefrom. Mesoscopically organized inorganic/block copolymer composites doped with dyes or complexes are prepared for use as optical hosts, chemical/physical/biological sensors, photochromic materials, optical waveguides, tunable solid-state lasers, or optoelectronic devices. The materials can be processed into a variety of different shapes, such as films, fibers, monoliths, for novel optical and sensing applications.
    Type: Application
    Filed: November 14, 2001
    Publication date: May 30, 2002
    Inventors: Gernot Wirnsberger, Brian J. Scott, Howard C. Huang, Nicholas A. Melosh, Peidong Yang, Bradley F. Chmelka, Galen D. Stucky
  • Patent number: 6036774
    Abstract: Methods of preparing metal oxide nanorods are described. The metal oxide nanorods have diameters between 1 and 200 nm and aspect ratios between 5 and 2000. The methods include the steps of generating a metal vapor in a furnace, exposing the nanorod growth substrate to the metal vapor within a growth zone in the furnace for a sufficient time to grow metal oxide nanorods on a surface of the nanorod growth substrate, removing the nanorod growth substrate from the growth zone after the sufficient time to grow metal oxide nanorods on a surface of the nanorod growth substrate, and removing the metal oxide nanorods from the furnace. The methods can be used to prepared large quantities of metal oxide nanorods.
    Type: Grant
    Filed: January 22, 1997
    Date of Patent: March 14, 2000
    Assignee: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Peidong Yang
  • Patent number: 5897945
    Abstract: Metal oxide nanorods and composite materials containing such nanorods. The metal oxide nanorods have diameters between 1 and 200 nm and aspect ratios between 5 and 2000.
    Type: Grant
    Filed: February 26, 1996
    Date of Patent: April 27, 1999
    Assignee: President and Fellows of Harvard College
    Inventors: Charles M. Lieber, Peidong Yang