Abstract: A new and improved process for rinsing and drying a wafer to remove photoresist stripping chemicals and residue from the wafer during a photoresist stripping operation. The rinsing and drying process includes dispensing a heated rinsing liquid onto the wafer followed by application of a heated drying gas against the wafer to dry the rinsing liquid from the wafer. Heating of the rinsing liquid and drying gas facilitates expedited rinsing and drying, respectively, of the wafer, resulting in increased wafer throughput and enhanced efficiency of the photoresist stripping process.