Abstract: A method of forming an interconnect structure over a substrate includes forming a nucleation layer over a surface of the substrate. The surface of the substrate comprises a plurality of openings, and the process of forming the nucleation layer includes (a) exposing the substrate to a tungsten-containing precursor gas to form a tungsten-containing layer over a surface of each of the plurality of openings, (b) exposing the formed tungsten-containing layer to an etchant gas, wherein exposing the tungsten-containing layer to the etchant gas etches at least a portion of the tungsten-containing layer disposed at a top region of each of the plurality of openings, and repeating (a) and (b) one or more times. The method further includes forming a bulk layer over the formed nucleation layer.

Abstract: A training method for evaluating the bonding accuracy of orthodontic brackets is provided. The evaluation method includes a training device for racket bonding accuracy evaluation which includes virtual teeth with root-shaped connectors and an evaluation base to fix the virtual teeth. Multiple reference lines are marked on the evaluation base, and their intersection is set as the evaluation point. When the virtual tooth is fixed to the evaluation base, the reference lines and the evaluation points are utilized for rapid evaluation of the bonding accuracy of the bracket. Moreover, thanks to their horizontal arrangement, when there are multiple virtual teeth, the evaluation of bracket bonding would be more intuitive and efficient than using the traditional articulator.

Abstract: Embodiments of the disclosure provided herein generally relate to a bottom cover plate (BCP) that enables control of radiation loss from a heating element inside a chamber for processing a substrate. The heating element is used to heat the substrate before or during processing and may heat the substrate unevenly due to uneven heat losses within the chamber. For example, the uneven heating of the substrate may result in uneven deposition of a material on the substrate, which may result in excess processing to correct the deposition or wasted product from disposing of improperly processed substrates. The BCP may be used to correct the uneven heating of the substrate.

Abstract: A structure of a substrate is provided including a tungsten-containing layer including a nucleation layer and a fill layer. The nucleation layer is disposed along sidewalls of the opening. The nucleation layer includes boron and tungsten. The fill layer is disposed over the nucleation layer within the opening. The tungsten-containing layer includes a resistivity of about 16 ??·cm or less. The tungsten-containing layer has a thickness of about 200 ? to about 600 ?. The tungsten-containing layer thickness is half a width of the tungsten-containing layer disposed within the opening between opposing sidewall portions of the opening.

Abstract: Embodiments herein are generally directed to methods of forming high aspect ratio metal contacts and/or interconnect features, e.g., tungsten features, in a semiconductor device. Often, conformal deposition of tungsten in a high aspect ratio opening results in a seam and/or void where the outward growth of tungsten from one or more walls of the opening meet. Thus, the methods set forth herein provide for a desirable bottom up tungsten bulk fill to avoid the formation of seams and/or voids in the resulting interconnect features, and provide an improved contact metal structure and method of forming the same. In some embodiments, an improved overburden layer or overburden layer structure is formed over the field region of the substrate to enable the formation of a contact or interconnect structure that has improved characteristics over conventionally formed contacts or interconnect structures.

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

Abstract: A training method for evaluating the bonding accuracy of orthodontic brackets is provided. The evaluation method includes a training device for racket bonding accuracy evaluation which includes virtual teeth with root-shaped connectors and an evaluation base to fix the virtual teeth. Multiple reference lines are marked on the evaluation base, and their intersection is set as the evaluation point. When the virtual tooth is fixed to the evaluation base, the reference lines and the evaluation points are utilized for rapid evaluation of the bonding accuracy of the bracket. Moreover, thanks to their horizontal arrangement, when there are multiple virtual teeth, the evaluation of bracket bonding would be more intuitive and efficient than using the traditional articulator.

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

Abstract: Methods and apparatus for cleaning a showerhead are provided. For example, the methods includes moving a substrate support including a heater disposed therein from a substrate processing position a first distance away from the showerhead to a cleaning position a second distance away from the showerhead, wherein the second distance is less than the first distance; heating the showerhead using the heater disposed in the substrate support to a predetermined temperature; at least one of supplying at least one cleaning gas to the processing chamber to form a plasma or supplying the plasma from a remote plasma source; and providing a predetermined pressure within an inner volume of the processing chamber and maintaining the plasma within the inner volume of the processing chamber while heating the showerhead to the predetermined temperature.

Abstract: A method and system for determining a thickness of a conductive film layer deposited on a wafer include at two eddy current sensors to take electrical resistivity measurements of the conductive film layer on the wafer as the wafer is being transported by a robot arm, a temperature sensor to determine a temperature change of the wafer during the electrical resistivity measurement, and a processing device to adjust a value of the electrical resistivity measurement by an amount based on the determined temperature change and to determine a thickness of the conductive film layer using the adjusted value of the electrical resistivity measurement and a previously determined correlation between electrical resistivity measurement values and respective thicknesses of conductive film layers. Alternatively, the wafer can be kept at a steady temperature when taking electrical resistivity measurements of the conductive film layer to determine a thickness of the conductive film layer.