Abstract: Optical proximity correction (OPC) is a technique used to compensate for optical distortions, process effects, or both, by modifying a pattern that is used during lithography. A reference OPC model is used to create an OPC design layout pattern based on pre-distorting a desired design layout pattern associated with an integrated circuit (IC). The OPC design layout pattern is used when the IC is produced, such that the fabricated IC ideally matches the desired design layout pattern. The present invention relates to using a regression OPC model to create estimated fragment movements of the desired design layout pattern. The estimated fragment movements are then provided as initial fragment movements to the reference OPC model, which then creates the OPC design layout pattern. The initial fragment movements provided by the regression OPC model may reduce the number of iterations needed by the reference OPC model, thereby reducing computation time.