Abstract: A memory cell structure includes a transistor structure and a capacitor structure, where the capacitor structure includes a hydrogen absorption layer. The hydrogen absorption layer absorbs hydrogen, which prevents or reduces the likelihood of the hydrogen diffusing into an underlying metal-oxide channel of the transistor structure. In this way, the hydrogen absorption layer minimizes and/or reduces the likelihood of hydrogen contamination in the metal-oxide channel, which may enable a low current leakage to be achieved for the memory cell structure and reduces the likelihood of data corruption and/or failure of the memory cell structure, among other examples.

Abstract: A curable composition includes an epoxy monomer component and an aniline-based hardener. The epoxy monomer component is a first component formed from a first epoxy monomer represented by Formula (I), or a second component including the first epoxy monomer represented by Formula (I) and a second epoxy monomer different from the first epoxy monomer represented by Formula (I), wherein each of the substituents in Formula (I) is given the definitions as set forth in the Specification and Claims. Based on 100 wt % of the epoxy monomer component, an amount of the first epoxy monomer represented by Formula (I) is not smaller than 25 wt % and less than 100 wt % and an amount of the second epoxy monomer is greater than 0% and not greater than 75 wt %. A cured product formed from the curable composition, and a method for encapsulating a semiconductor device using the curable composition are also provided.

Abstract: A semiconductor includes a substrate. A gate structure is disposed on the substrate. A liner oxide contacts a side of the gate structure. A silicon oxide spacer contacts the liner oxide. An end of the silicon oxide spacer forms a kink profile. A silicon nitride spacer contacts the silicon oxide spacer and a tail of the silicon nitride spacer covers part of the kink profile. A stressor covers the silicon nitride spacer and the substrate.

Abstract: A SAR ADC includes: a sample-hold (S/H) circuit sampling an input voltage to generate a S/H output signal; a DAC generating a DAC output signal; a comparator comparing the DAC output signal with the S/H output signal to generate a comparison output signal; a SAR combinational digital circuit group; a multiplexer circuit; and a plurality of registers for registering the comparison output signal as register output signals and outputting as an output signal of the SAR ADC. The SAR combinational digital circuit group generates a plurality of first and second SAR output signals based on the register output signals. The multiplexer circuit is controlled by on the register output signals to select among the first and the second SAR output signals as a plurality of multiplexer output signals for sending to the DAC. A capacitor coupling relationship of the DAC is controlled by the multiplexer output signals.

Abstract: A memory device includes a memory array, a first latch and a first logic element. The memory array is configured to operate according to a first global write signal. The first latch is configured to generate a first latch write data based on a clock signal. The first logic element is configured to generate the first global write signal based on the clock signal and the first latch write data.

Abstract: Disclosed herein are novel single-stranded anti-sense oligonucleotides (ASOs) capable of reducing the transcription of thioredoxin domain containing protein 5 (TXNDC5) mRNA. Also disclosed is use of the single-stranded ASOs as disclosed herein for manufacturing medicaments suitable for treating a disease associated with upregulation of TXNDC5. Accordingly, a pharmaceutical composition comprising the disclosed ASO molecules is provided; as well as a method of treating a subject suffering from TXNDC5-mediated disease via administering to the subject the disclosed single-stranded ASO molecules.

Abstract: Methods and apparatus for rating Uniform Resource Locators (URLs) are disclosed. The method includes determining a request size pertaining to a length of the URL to be rated and for generating a rating request message containing the URL. The rating request message is a DNS (domain name system) message if the request size is less than or equal to a predefined size limitation, and the rating request message is a HTTP (hypertext transfer protocol) message if the request size is greater than the predefined size limitation.