Patents by Inventor Peixin Qian

Peixin Qian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6324308
    Abstract: An imaging system having an improved correction module is provided. The system has a detector array with a plurality of detectors that are arranged in rows and columns. Each detector generates a non-corrected data value. The system also includes a signal processing module, coupled to the detector array, for receiving the non-corrected data values and for correcting the non-corrected data values for errors that stem from non-uniformity in detector process and bias. The non-uniformity correction module has a first input for receiving the non-corrected data values, a second input for receiving one or more fitting coefficients, and a third input for receiving a correction order. Based on these inputs, the non-uniformity correction module generates a plurality of corrected data values corresponding to the received non-corrected data values.
    Type: Grant
    Filed: November 24, 1998
    Date of Patent: November 27, 2001
    Assignee: Winbond Electronics (H.K.) Ltd
    Inventors: Peiyi Chen, Ruizhong Wang, Peixin Qian
  • Patent number: 6252260
    Abstract: An electrode structure of an HIP infrared detector. A HIP infrared comprises a p-type silicon substrate which has an exposed guard ring, an exposed region of the silicon substrate encompassed by the guard ring, and a silicon oxide layer covering a part of the guard ring and the silicon substrate. On the silicon substrate, a photosensitive alloy layer comprises an amorphous photosensitive alloy layer on the silicon oxide layer, and a single crystalline photosensitive alloy layer on both the part of the silicon substrate encompassed by the guard ring and the guard ring. An electrode to electrically connects the silicon substrate via the photosensitive alloy layer. Moreover, the HIP infrared further comprises a p+ Ohmic contact in the silicon substrate and another electrode to contact with the p+ Ohmic contact.
    Type: Grant
    Filed: June 26, 1998
    Date of Patent: June 26, 2001
    Assignee: United Microelectronics Corp.
    Inventors: Peiyi Chen, Peixin Qian, Ruizhong Wang