Patents by Inventor Peixuan JI

Peixuan JI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Monolayer graphene on non-polar face SiC substrate and control method thereof
    Patent number: 12051585
    Abstract: The present invention provides a control method to epitaxial growth monolayer graphene, in which a monolayer graphene is epitaxially grown on a non-polar crystal face at arbitrary angle of a non-polar crystal face SiC substrate, thereby utilizing the non-polar crystal face to manipulate the electrical transport properties of graphene. A monolayer graphene having ballistic transport properties can be epitaxially grown at arbitrary angle of non-polar crystal face SiC substrate by the above-mentioned control method.
    Type: Grant
    Filed: February 28, 2019
    Date of Patent: July 30, 2024
    Assignee: TIANJIN UNIVERSITY
    Inventors: Lei Ma, Walter Alexander De Heer, Peixuan Ji, Kaimin Zhang, Jian Zhao, Mei Zhao
  • MONOLAYER GRAPHENE ON NON-POLAR FACE SiC SUBSTRATE AND CONTROL METHOD THEREOF
    Publication number: 20220122832
    Abstract: The present invention provides a control method to epitaxial growth monolayer graphene, in which a monolayer graphene is epitaxially grown on a non-polar crystal face at arbitrary angle of a non-polar crystal face SiC substrate, thereby utilizing the non-polar crystal face to manipulate the electrical transport properties of graphene. A monolayer graphene having ballistic transport properties can be epitaxially grown at arbitrary angle of non-polar crystal face SiC substrate by the above-mentioned control method.
    Type: Application
    Filed: February 28, 2019
    Publication date: April 21, 2022
    Inventors: Lei MA, Walter Alexander DE HEER, Peixuan JI, Kaimin ZHANG, Jian ZHAO, Mei ZHAO