Abstract: An active device substrate including a flexible substrate, an inorganic insulation layer, an organic insulation pattern, a conductive device and a peripheral wiring is provided. The flexible substrate has an active region, a peripheral region outside the active region and a bending region connected between the active region and the peripheral region. The inorganic insulation layer is disposed on the flexible substrate and has a groove disposed in the bending region. The organic insulation pattern is disposed in the groove of the inorganic insulation layer. The peripheral wiring is extended from the active region to the conductive device in the peripheral region. The peripheral wiring is disposed on the organic insulation pattern, and the organic insulation pattern is located between the peripheral wiring and the flexible substrate.

Abstract: An active device substrate including a flexible substrate, an inorganic insulation layer, an organic insulation pattern, a conductive device and a peripheral wiring is provided. The flexible substrate has an active region, a peripheral region outside the active region and a bending region connected between the active region and the peripheral region. The inorganic insulation layer is disposed on the flexible substrate and has a groove disposed in the bending region. The organic insulation pattern is disposed in the groove of the inorganic insulation layer. The peripheral wiring is extended from the active region to the conductive device in the peripheral region. The peripheral wiring is disposed on the organic insulation pattern, and the organic insulation pattern is located between the peripheral wiring and the flexible substrate.

Abstract: A flexible panel includes a substrate, a first insulating layer, a second insulating layer, a sacrificial layer, and a metal wiring layer. The substrate has an active area, a peripheral area, and an intermediate area. The first insulating layer is in the three areas of the substrate, and the first insulating layer in the intermediate area has a first pattern. The second insulating layer is on the first insulating layer. The second insulating layer in the intermediate area has a first opening extending along a first direction, so that the second insulating layer does not cover the first pattern of the first insulating layer. The sacrificial layer is between the first insulating layer and the second insulating layer in the intermediate area, and does not cover the first pattern of the first insulating layer. The metal wiring layer extends between the active area and the peripheral area.

Abstract: A display panel includes a first substrate, a plurality of first signal lines, a plurality of second signal lines, and a plurality of pixel electrodes. The first substrate has at least one bendable area and two non-bendable areas. The at least one bendable area is located between the two non-bendable areas. One of the first signal lines and one of the second signal lines are electrically connected to at least one subpixel. Each of the a subpixels includes a control unit, and the control units are provided only in the non-bendable areas and are not provided in the bendable area. The pixel electrodes are provided in the bendable area and the non-bendable areas. Each of the controls units is electrically connected to one of the pixel electrodes.

Abstract: A flexible panel includes a substrate, a first insulating layer, a second insulating layer, a sacrificial layer, and a metal wiring layer. The substrate has an active area, a peripheral area, and an intermediate area. The first insulating layer is in the three areas of the substrate, and the first insulating layer in the intermediate area has a first pattern. The second insulating layer is on the first insulating layer. The second insulating layer in the intermediate area has a first opening extending along a first direction, so that the second insulating layer does not cover the first pattern of the first insulating layer. The sacrificial layer is between the first insulating layer and the second insulating layer in the intermediate area, and does not cover the first pattern of the first insulating layer. The metal wiring layer extends between the active area and the peripheral area.

Abstract: A method of fabricating a polycrystalline silicon thin film transistor device includes the following steps. A substrate is provided, and a buffer layer having dopants is formed on the substrate. An amorphous silicon layer is formed on the buffer layer having the dopants. A thermal process is performed to convert the amorphous silicon layer into a polycrystalline silicon layer by means of polycrystalization, and to simultaneously out-diffuse a portion of the dopants in the buffer layer into the polycrystalline silicon layer for adjusting a threshold voltage. The polycrystalline silicon layer is patterned to form an active layer. A gate insulating layer is formed on the active layer. A gate electrode is formed on the gate insulating layer. A source doped region and a drain doped region are formed in the active layer.

Abstract: A display panel includes a first substrate, a plurality of first signal lines, a plurality of second signal lines, and a plurality of pixel electrodes. The first substrate has at least one bendable area and two non-bendable areas. The at least one bendable area is located between the two non-bendable areas. One of the first signal lines and one of the second signal lines are electrically connected to at least one subpixel. Each of the a subpixels includes a control unit, and the control units are provided only in the non-bendable areas and are not provided in the bendable area. The pixel electrodes are provided in the bendable area and the non-bendable areas. Each of the controls units is electrically connected to one of the pixel electrodes.

Abstract: A method of fabricating a polycrystalline silicon thin film transistor device includes the following steps. A substrate is provided, and a buffer layer having dopants is formed on the substrate. An amorphous silicon layer is formed on the buffer layer having the dopants. A thermal process is performed to convert the amorphous silicon layer into a polycrystalline silicon layer by means of polycrystalization, and to simultaneously out-diffuse a portion of the dopants in the buffer layer into the polycrystalline silicon layer for adjusting a threshold voltage. The polycrystalline silicon layer is patterned to form an active layer. A gate insulating layer is formed on the active layer. A gate electrode is formed on the gate insulating layer. A source doped region and a drain doped region are formed in the active layer.

Abstract: A method for fabricating flexible display module mainly includes following steps: providing a transparent carrier with a carrying-surface and a back-surface opposite to the carrying-surface; forming a photosensitive-release-film on the carrying-surface; providing a flexible substrate on the photosensitive-release-film; forming a pixel array on the flexible substrate; during or after forming the pixel array, conducting irradiation on the photosensitive-release-film from the back-surface of the transparent carrier to weaken bonding force between the photosensitive-release-film and the transparent carrier or simultaneously weaken both the bonding force between the photosensitive-release-film and the transparent carrier and the structure strength of the photosensitive-release-film; and then, removing the flexible substrate from the transparent carrier, in which at least one portion of the photosensitive-release-film is peeled off from the carrying-surface and remains on the flexible substrate.

Abstract: A method for fabricating flexible display module mainly includes following steps: providing a transparent carrier with a carrying-surface and a back-surface opposite to the carrying-surface; forming a photosensitive-release-film on the carrying-surface; providing a flexible substrate on the photosensitive-release-film; forming a pixel array on the flexible substrate; during or after forming the pixel array, conducting irradiation on the photosensitive-release-film from the back-surface of the transparent carrier to weaken bonding force between the photosensitive-release-film and the transparent carrier or simultaneously weaken both the bonding force between the photosensitive-release-film and the transparent carrier and the structure strength of the photosensitive-release-film; and then, removing the flexible substrate from the transparent carrier, in which at least one portion of the photosensitive-release-film is peeled off from the carrying-surface and remains on the flexible substrate.

Abstract: A method for producing an optically active compound includes reacting a nucleophile with a mixture of R- and S-stereoisomers of an azolide substrate by enzyme-catalyzed kinetic resolution so as to produce the optically active compound, wherein the azolide substrate contains an azole group used as a leaving group and an acyl group directly bonded to a nitrogen atom of the azole group.

Abstract: A method for producing an optically active compound includes reacting a nucleophile with a mixture of R- and S-stereoisomers of an azolide substrate by enzyme-catalyzed kinetic resolution so as to produce the optically active compound, wherein the azolide substrate contains an azole group used as a leaving group and an acyl group directly bonded to a nitrogen atom of the azole group.