Abstract: The application relates to a manufacture method of a high-resistivity silicon handle wafer for a hybrid substrate structure. The method comprises a step of producing the wafer having a crystal orientation identifier and a certain thickness. The method further comprises a step of thinning the produced wafer from the certain thickness to a desired thickness of the wafer in order to obtain the thinned wafer. The method further comprises a step of providing a surface passivation layer having a certain layer thickness on a front surface of the thinned wafer. The method further comprises a step of polishing the passivation layer from the certain layer thickness to a desired final layer thickness of the passivation layer so that the polished front surface of the wafer enables active layer bonding in order to form the hybrid substrate structure.

Abstract: The invention relates to the use of biogenic estrogen sulfamates for the oral discontinuous application for hormone replacement therapy (HRT). The discontinuous administration takes place in intervals ranging from 2 to 40 days. The invention also provides the additional application of gestagens, preferably continuously in the form of an implant or in the form of an intrauterine releasing system (IUD). Estrone sulfamate, estradiol sulfamate or an N-acyl sulfamate of estrone, estradiol or estriol having up to 7 C-atoms in the acyl chain, or a combination comprised of two or more of said active ingredients are used as biogenic estrogen sulfamates.