Abstract: A probe apparatus of a millimeter or submillimeter radio frequency band comprises transition layers having outermost layers on opposite surfaces of the probe apparatus. An internal transition cavity extends through the transition layers for guiding electromagnetic radiation within the probe apparatus. A probe layer disposed between the transition layers, the probe layer having a lateral transmission line for interacting with the electromagnetic radiation guided by the internal transmission cavity.

Abstract: A semiconductor apparatus having a silicon substrate layer at least portion of which is doped with dopants of a conductivity type; and at least one insulator layer formed above the silicon substrate layer, wherein the at least one insulator layer and the dopants of the silicon substrate layer have opposite electric charges.

Abstract: A semiconductor apparatus having a silicon substrate layer at least portion of which is doped with dopants of a conductivity type; and at least one insulator layer formed above the silicon substrate layer, wherein the at least one insulator layer and the dopants of the silicon substrate layer have opposite electric charges.

Abstract: A probe apparatus of a millimeter or submillimeter radio frequency band comprises transition layers having outermost layers on opposite surfaces of the probe apparatus. An internal transition cavity extends through the transition layers for guiding electromagnetic radiation within the probe apparatus. A probe layer disposed between the transition layers, the probe layer having a lateral transmission line for interacting with the electromagnetic radiation guided by the internal transmission cavity.

Abstract: A semiconductor apparatus having a silicon substrate layer at least portion of which is doped with dopants of a conductivity type; and at least one insulator layer formed above the silicon substrate layer, wherein the at least one insulator layer and the dopants of the silicon substrate layer have opposite electric charges.

Abstract: Apparatus for adjusting the height of an article, such as a table, chair or the like, includes at least one guide tube mounted in a base and a slide mounted within each guide tube connected to the article whose height is to be adjusted. The slide is locked at a selected position within the guide tube to thereby lock the article at its desired height by means of a locking mechanism which includes at least one wedge member mounted on the slide to define a space which diminishes in size between the wedge member and the guide tube and a corresponding locking member situated within the space and urged therein into engagement with the wedge member and the guide tube. Apparatus are provided for moving the locking member out of its wedged position to unlock the slide.