Abstract: A pressure sensing method of detect the end point in a gas cleanup reaction for removing a deposited coating on the interior wall of a low-pressure chemical vapor deposition furnace. The method includes passing a reactive gas into the low-pressure chemical vapor deposition furnace and monitoring a gas pressure inside the furnace. A control factor is varied so that gas pressure inside the furnace remains constant. The degree of variation of the control factor when thickness of the coating is reduced to an acceptable level is set as an end point value. The passage of reactive gas into the low-pressure chemical vapor deposition furnace is stopped as soon as the control factor reaches the end point value.

Abstract: A semiconductor device having a trench capacitor is provided, which includes a semiconductor substrate having a trench formed thereon, in which the semiconductor substrate serves as a first bottom plate; a first conductive structure formed in the trench, in which a bottom of the first conductive structure is electrically connected to the semiconductor substrate to serve as a second bottom plate; a first dielectric layer formed on the sidewall of the trench; a second conductive structure isolatedly formed around the first conductive structure to serve as a top plate; a second dielectric layer formed between the first conductive structure and the second conductive structure to isolate the first conductive structure and the second conductive structure; and a third conductive structure formed on the semiconductor substrate and electrically connected to the second conductive structure.

Abstract: A wafer-processing apparatus is provided which includes an container, a gas-supplying pipe, a pressure-leveling sensor, a controller, and an auto-cleaning device. The container is used for containing an processing solution. The gas-supplying pipe is used for supplying a gas into the container, wherein a pressure of the gas contained in the gas-supplying pipe is relative to a level of the processing solution. The pressure-leveling sensor connected to the gas-supplying pipe is used for detecting a pressure change of the gas contained in the gas-supplying pipe and correspondingly outputting a level signal. The controller electrically connected to the container and the pressure-leveling sensor is used for outputting a discharge signal to control the container to discharge the processing solution after a predetermined amount of wafers has been etched by the processing solution, and controlling an charge valve to charge the container with the processing solution in response to the level signal.