Patents by Inventor Pendar ARDALAN

Pendar ARDALAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Post treatment for dielectric constant reduction with pore generation on low K dielectric films
    Patent number: 9324571
    Abstract: A method and apparatus for depositing a low K dielectric film with one or more features is disclosed herein. A method of forming a dielectric layer can include positioning a substrate in a processing chamber, delivering a deposition gas to the processing chamber, depositing a dense organosilicon layer using the deposition gas on the surface of the substrate, the dense organosilicon layer comprising a porogenic carbon, transferring a pattern into the dense organosilicon layer, forming a pore-forming plasma from a reactant gas, exposing the dense organosilicon layer to the pore-forming plasma to create a porous organosilicon layer, wherein the pore-forming plasma removes at least a portion of the porogenic carbon and exposing the porous organosilicon layer to a desiccating post treatment.
    Type: Grant
    Filed: February 4, 2014
    Date of Patent: April 26, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kang Sub Yim, Pendar Ardalan, Sure Ngo, Alexandros T. Demos
  • POST TREATMENT FOR DIELECTRIC CONSTANT REDUCTION WITH PORE GENERATION ON LOW K DIELECTRIC FILMS
    Publication number: 20150380265
    Abstract: A method and apparatus for depositing a low K dielectric film with one or more features is disclosed herein. A method of forming a dielectric layer can include positioning a substrate in a processing chamber, delivering a deposition gas to the processing chamber, depositing a dense organosilicon layer using the deposition gas on the surface of the substrate, the dense organosilicon layer comprising a porogenic carbon, transferring a pattern into the dense organosilicon layer, forming a pore-forming plasma from a reactant gas, exposing the dense organosilicon layer to the pore-forming plasma to create a porous organosilicon layer, wherein the pore-forming plasma removes at least a portion of the porogenic carbon and exposing the porous organosilicon layer to a desiccating post treatment.
    Type: Application
    Filed: February 4, 2014
    Publication date: December 31, 2015
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Kang Sub YIM, Pendar ARDALAN, Sure NGO, Alexandros T. DEMOS
  • Adhesion layer to minimize dielectric constant increase with good adhesion strength in a PECVD process
    Patent number: 9165998
    Abstract: Embodiments of the present invention provide a film stack and method for depositing an adhesive layer for a low dielectric constant bulk layer without the need for an initiation layer. A film stack for use in a semiconductor device comprises of a dual layer low-K dielectric deposited directly on an underlying layer. The dual low-K dielectric consists of an adhesive layer deposited without a carbon free initiation layer.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: October 20, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kang Sub Yim, Pendar Ardalan, Sure Ngo, Alexandros T. Demos
  • ADHESION LAYER TO MINIMIZE DIELECTRIC CONSTANT INCREASE WITH GOOD ADHESION STRENGTH IN A PECVD PROCESS
    Publication number: 20140264780
    Abstract: Embodiments of the present invention provide a film stack and method for depositing an adhesive layer for a low dielectric constant bulk layer without the need for an initiation layer. A film stack for use in a semiconductor device comprises of a dual layer low-K dielectric deposited directly on an underlying layer. The dual low-K dielectric consists of an adhesive layer deposited without a carbon free initiation layer.
    Type: Application
    Filed: March 14, 2014
    Publication date: September 18, 2014
    Applicant: Applied Materials, Inc.
    Inventors: Kang Sub YIM, Pendar ARDALAN, Sure NGO, Alexandros T. DEMOS