Patents by Inventor Peng Chai

Peng Chai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11328926
    Abstract: The present invention relates to the field of chemical industry, and discloses organosilicone micro-mesoporous ultra-low dielectric thin films and preparation methods therefor. A structural formula of a POSS-based organosilane precursor in the thin film is as follows: where n is 12, 16, 18, 20, or 22, and X is CH3 or CH2CH3. The preparation method includes the following steps: dissolving a certain amount of the POSS-based precursor in an organic solvent at a room temperature; adding an appropriate amount of a photoacid generator, after uniformly stirring, spraying a mixed liquid to form a film on a substrate; placing the substrate under a light-emitting diode lamp for irradiating for a preset time after the organic solvent is completely evaporated; then placing the substrate in N,N-dimethylformamide for undergoing a transesterification reaction with fluoroalkyl alcohol for 24-72 h; and washing and drying to obtain the organosilicone micro-mesoporous ultra-low dielectric thin film.
    Type: Grant
    Filed: October 9, 2018
    Date of Patent: May 10, 2022
    Assignee: HUAIYIN INSTITUTE OF TECHNOLOGY
    Inventors: Lingli Ni, Yongtao Liu, Tao Xie, Minhua Xu, Zhitian Chen, Peng Chai, Xiaoyan Gao, Liang Dong Feng, Shizhong Zhang
  • Publication number: 20210175074
    Abstract: The present invention relates to the field of chemical industry, and discloses organosilicone micro-mesoporous ultra-low dielectric thin films and preparation methods therefor. A structural formula of a POSS-based organosilane precursor in the thin film is as follows: where n is 12, 16, 18, 20, or 22, and X is CH3 or CH2CH3. The preparation method includes the following steps: dissolving a certain amount of the POSS-based precursor in an organic solvent at a room temperature; adding an appropriate amount of a photoacid generator, after uniformly stirring, spraying a mixed liquid to form a film on a substrate; placing the substrate under a light-emitting diode lamp for irradiating for a preset time after the organic solvent is completely evaporated; then placing the substrate in N,N-dimethylformamide for undergoing a transesterification reaction with fluoroalkyl alcohol for 24-72 h; and washing and drying to obtain the organosilicone micro-mesoporous ultra-low dielectric thin film.
    Type: Application
    Filed: October 9, 2018
    Publication date: June 10, 2021
    Inventors: Lingli NI, Yongtao LIU, Tao XIE, Minhua XU, Zhitian CHEN, Peng CHAI, Xiaoyan GAO, Liang Dong FENG, Shizhong ZHANG
  • Patent number: 8974529
    Abstract: An artificial disc includes an upper joint (3) and a lower joint (7) which fit each other in a corresponding upper and lower relationship, and a removable fixed connection structure for fixedly connecting the upper joint (3) and the lower joint (7).
    Type: Grant
    Filed: May 14, 2010
    Date of Patent: March 10, 2015
    Assignee: Beijing Naton Technology Group Co.
    Inventors: Cheng-kung Cheng, Peng Chai, Fuqiang Zhao, Jianxiang Liu
  • Publication number: 20120095562
    Abstract: An artificial intervertebral disc includes an upper joint (3) and a lower joint (7) configured according to the corresponding upper and lower positions, and which includes a removable fixing structure which makes a permanent connection between the upper joint (3) and the lower joint (7).
    Type: Application
    Filed: May 14, 2010
    Publication date: April 19, 2012
    Applicant: BEIJING NATON TECHNOLOGY GROUP CO., LTD.
    Inventors: Cheng-kung Cheng, Peng Chai, Fuqiang Zhao, Jianxiang Liu