Abstract: A semiconductor structure and method for manufacturing the same is disclosed. The present invention relates to a semiconductor having a dielectric layer applied on a gate of a transistor, and a high dielectric-coefficient, and a manufacturing method of the semiconductor. Ti is formed on HfO2 to absorb oxygen from the dielectric layer to reduce its thickness, and even make it disappear. However, the TiO2 grown on the layer of Ti advances the growing of HfO2. Simultaneously, the dielectric constant of TiO2 is about 50. The TiO2 substantially enhances the dielectric constant for the dielectric layer. Ti absorbs the oxygen to reduce its thickness and increase the dielectric constant to reduce EOT. Moreover, TiO2 is formed and the dielectric constant is increased after heating. Accordingly, leakage is avoided in the TiO2. The present invention enhances the applications for high-k gate dielectrics with high electric constants, and continuously reduces the EOT.

Abstract: A structure of the relaxed SiGe epitaxial layer and a fabrication method comprises a Si substrate, a Si interfacial layer positioning on the substrate, a SiGe graded buffer layer positioning on the Si interfacial layer, and a uniform SiGe epitaxy layer positioning on the SiGe graded buffer layer. It uses a mesa structure and obtains a highly relaxed SiGe epitaxial layer with a low defect density of threading dislocations, a smooth surface. A strained Si can be formed on the strained relaxation layer. The strained Si, the strained Ge, the strained Si/Ge can apply to the high-speed planar electronic devices. By using a mesa structure, it can efficiently decrease the required growth time and cost in the conventional relaxed SiGe epitaxy layer.