Abstract: Disclosed in the present application is a cooling system for a reflow furnace, the reflow furnace comprising a heating zone, and the cooling system being used to regulate a temperature of the heating zone, the cooling system comprising: at least one gas inlet and at least one gas discharge port, the at least one gas inlet and the at least one gas discharge port being disposed on the heating zone; a blowing apparatus; at least one gas intake pipeline, an inlet of the at least one gas intake pipeline being connected to the blowing apparatus, an outlet of the at least one gas intake pipeline being connected to the at least one gas inlet, the at least one gas intake pipeline being able to controllably establish fluid communication between the blowing apparatus and the at least one gas inlet; and at least one gas discharge pipeline, an inlet of the at least one gas discharge pipeline being connected to the at least one gas discharge port, an outlet of the at least one gas discharge pipeline being connected to the

Abstract: There is disclosed a computing apparatus, including: a hardware platform; an interface to a computer expansion bus; logic configured to operate on the hardware platform to: provision an unshaded memory queue, including a dedicated memory window for the computer expansion bus; and provision a descriptor ring, the descriptor ring configured to receive a descriptor, identify the descriptor as a chain descriptor targeted to a descriptor chain, identify a general descriptor unit (GDU) of the chain descriptor as having a device identifier (DID) matching the computing apparatus, process a workload of the GDU according to a private data field of the GDU, and forward the chain descriptor to a next-hop device via a switch fabric of the computer expansion bus, including bypassing a root complex of the computer expansion bus.

Abstract: Disclosed in the present application is a cooling system for a reflow furnace, the reflow furnace comprising a heating zone, and the cooling system being used to regulate a temperature of the heating zone, the cooling system comprising: at least one gas inlet and at least one gas discharge port, the at least one gas inlet and the at least one gas discharge port being disposed on the heating zone; a blowing apparatus; at least one gas intake pipeline, an inlet of the at least one gas intake pipeline being connected to the blowing apparatus, an outlet of the at least one gas intake pipeline being connected to the at least one gas inlet, the at least one gas intake pipeline being able to controllably establish fluid communication between the blowing apparatus and the at least one gas inlet; and at least one gas discharge pipeline, an inlet of the at least one gas discharge pipeline being connected to the at least one gas discharge port, an outlet of the at least one gas discharge pipeline being connected to the

Abstract: The present application relates to a gas control system and method for a reflow soldering furnace, comprising: an oxygen detecting device, capable of coming into contact with a gas in a furnace chamber, for detecting an oxygen concentration in the furnace chamber; an intake valve device, for controllably establishing fluid communication between a working gas source and the furnace chamber, thereby inputting the working gas into the furnace chamber; and a controller, for controlling the opening extent of at least one intake valve device based on an oxygen concentration signal, thereby regulating a flow rate of the working gas inputted into the furnace chamber.

Abstract: Provided are a light-emitting element and a display device containing the light-emitting element. The light-emitting element comprises an anode, a cathode opposite to the anode, and a plurality of organic layers placed between the anode and the cathode; at least three of the plurality of organic layers each independently contain a compound having a spirobifluorene structure; or at least two of the plurality of organic layers each contain the compound having a spirobifluorene structure and together contain at least three types of the compound having a spirobifluorene structure. By providing the organic layers with the compound having a spirobifluorene structure, the HOMO or LUMO energy level difference for hole or electron transport between different organic layers can be reduced due to the spirobifluorene compounds having the same main ring structure, which facilitates injection of electrons and/or holes, improving the luminous efficiency and lowering the turn on voltage.

Abstract: There is disclosed a computing apparatus, including: a hardware platform; an interface to a computer expansion bus; logic configured to operate on the hardware platform to: provision an unshaded memory queue, including a dedicated memory window for the computer expansion bus; and provision a descriptor ring, the descriptor ring configured to receive a descriptor, identify the descriptor as a chain descriptor targeted to a descriptor chain, identify a general descriptor unit (GDU) of the chain descriptor as having a device identifier (DID) matching the computing apparatus, process a workload of the GDU according to a private data field of the GDU, and forward the chain descriptor to a next-hop device via a switch fabric of the computer expansion bus, including bypassing a root complex of the computer expansion bus.

Abstract: A compound and an organic optoelectronic device are provided. The compound has the following chemical formula (I): In the chemical formula (I), R1 to R10 are independently selected from hydrogen, deuterium, C1 to C30 alkyl, C1 to C30 heteroatom-substituted alkyl, C6 to C30 aryl, and C2 to C30 heteroaryl; X1 is selected from O, S, substituted or unsubstituted imino, substituted or unsubstituted methylene, and substituted or unsubstituted silylene. A substituent is selected from hydrogen, deuterium, C1 to C30 alkyl, C1 to C30 heteroatom-substituted alkyl, C6 to C30 aryl, and C2 to C30 heteroaryl.

Abstract: An organic mixture, comprising a first organic compound and a second organic compound that forms an exciplex with the first organic compound. The first organic compound is an aromatic compound containing a triphenylboron heterocycle, and the second organic compound is a compound containing an aromatic fused heterocycle. LUMOH1, HOMOH1 and ET(H1) are respectively defined as the lowest unoccupied orbital, highest occupied orbital and triplet energy levels of the first organic compound, and LUMOH2, HOMOH2 and ET(H2) are respectively defined as the lowest unoccupied orbital, highest occupied orbital and triplet energy levels of the second organic compound, min((LUMOH1?HOMOH2, LUMOH2?HOMOH1)?min(ET(H1), ET(H2))+0.1 eV.

Abstract: Provided are a light-emitting element and a display device containing the light-emitting element. The light-emitting element comprises an anode, a cathode opposite to the anode, and a plurality of organic layers placed between the anode and the cathode; at least three of the plurality of organic layers each independently contain a compound having a spirobifluorene structure; or at least two of the plurality of organic layers each contain the compound having a spirobifluorene structure and together contain at least three types of the compound having a spirobifluorene structure. By providing the organic layers with the compound having a spirobifluorene structure, the HOMO or LUMO energy level difference for hole or electron transport between different organic layers can be reduced due to the spirobifluorene compounds having the same main ring structure, which facilitates injection of electrons and/or holes, improving the luminous efficiency and lowering the turn on voltage.

Abstract: A D-A type compound and an application thereof. The D-A type compound has the general formula (1) as follows, wherein L is a linking unit, -L- is selected from a single bond, a double bond, a triple bond, an aromatic group with a carbon atom number of 6 to 40, or a heteroaromatic group with a carbon atom number of 3 to 40; Ar is an aromatic group with a carbon atom number of 6 to 20, or a heteroaromatic group with a carbon atom number of 3 to 20; Z1, Z2 and Z3 independently represent a single bond, N(R), B(R), C(R)2, Si(R)2, O, C?N(R), C?C(R)2, P(R), P(?O)R, S, S?O or SO2 respectively; X1, X2 and X3 independently optionally represent N(R), C(R)2, Si(R)2, O, C?N(R), C?C(R)2, P(R), P(?O)R, S, S?O or SO2 respectively.

Abstract: Provided are a spirocyclic derivative, and a high polymer, a mixture, a composition and an organic electronic device containing same, wherein in the spirocyclic derivative, two spirocyclic units are directly or indirectly connected by a sp3 hybridized carbon atom, thus effectively adjusting the energy level of the compound, and being beneficial for improving the photoelectric performance of the compound and the stability of the device. An effective solution is provided for effectively reducing the manufacturing cost and improving the efficiency and lifetime of a light-emitting device.

Abstract: Disclosed are a terbenzocyclopentadiene compound of better solubility and film-forming property, and a high polymer, mixture, composition and organic electronic device comprising same. This terbenzocyclopentadiene compound contains a benzocyclopentadiene structure. The matching of energy level and the symmetry of the structure provide a possibility for increasing the chemical/environmental stability of terbenzocyclopentadiene compounds and photoelectric devices. This terbenzocyclopentadiene compound has a better solubility in an organic solvent, and also facilitates forming a high-quality film by a printing method due to a high molecular weight. After this terbenzocyclopentadiene compound is used in OLED, particularly as a luminescent layer material, a higher quantum efficiency, luminescence stability and device life time can be provided.

Abstract: A compound and an organic optoelectronic device are provided. The compound has the following chemical formula (I): In the chemical formula (I), R1 to R10 are independently selected from hydrogen, deuterium, C1 to C30 alkyl, C1 to C30 heteroatomi-substituted alkyl, C6 to C30 aryl, and C2 to C30 heteroaryl; X1 is selected from O, S, substituted or unsubstituted imino, substituted methylene, and substituted or unsubstituted silylene. A substituent is selected from hydrogen, deuterium, C1 to C30 alkyl, C1 to C30 heteroatom-substituted alkyl, C6 to C30 aryl, and C2 to C30 heteroaryl.

Abstract: A semiconductor substrate assembly includes a semiconductor material layer, a first isolation layer, a second isolation layer, a first conductive pillar, and a second conductive pillar. The semiconductor material layer has a first surface and a second surface opposite to the first surface. The first isolation layer is located on the first surface of the semiconductor material layer. The second isolation layer is located on the second surface of the semiconductor material layer. The first conductive pillar, supplied with a first voltage, penetrates the semiconductor material layer, the first isolation layer, and the second isolation layer. The second conductive pillar is supplied with to a second voltage, and a part of the second conductive pillar is formed in the second isolation layer, the second conductive pillar penetrates the second isolation layer and touches the second surface of the semiconductor material layer.

Abstract: A semiconductor substrate assembly is proposed. The semiconductor interposer comprises a substrate having a first surface and a second surface opposite to the first surface, a first conductive pad, a second conductive pad and a conductive pillar. The first conductive pad is formed at a predetermined location of the first surface of the substrate. The second conductive pad is formed at a predetermined location of the second surface of the substrate as compared with the position of the first conductive pad. The conductive pillar is formed in the substrate and contacts with one of the first conductive pad and the second conductive pad.

Abstract: A chip stacking structure including a plurality of microbump structures, a plurality of first substrates, at least one first space layer, a plurality of second substrates and at least one second space layer is provided. The first substrates are stacked upon each other by a portion of the microbump structures, and each of the first substrates includes at least one first redistribution layer. The first space layer is located between the stacked first substrates. The second substrates are stacked on at least one of the first substrates by another portion of the microbump structures, and each of the second substrates includes at least one second redistribution layer. The second space layer is located between the stacked first and second substrates. The first redistribution layers, the second redistribution layers and the microbump structures form a plurality of impedance elements, and the impedance elements provide a specific oscillation frequency.

Abstract: A semiconductor substrate assembly includes a semiconductor material layer, a first isolation layer, a second isolation layer, a first conductive pillar, and a second conductive pillar. The semiconductor material layer has a first surface and a second surface opposite to the first surface. The first isolation layer is located on the first surface of the semiconductor material layer. The second isolation layer is located on the second surface of the semiconductor material layer. The first conductive pillar, supplied with a first voltage, penetrates the semiconductor material layer, the first isolation layer, and the second isolation layer. The second conductive pillar is supplied with to a second voltage, and a part of the second conductive pillar is formed in the second isolation layer, the second conductive pillar penetrates the second isolation layer and touches the second surface of the semiconductor material layer.

Abstract: A chip stacking structure including a plurality of microbump structures, a plurality of first substrates, at least one first space layer, a plurality of second substrates and at least one second space layer is provided. The first substrates are stacked upon each other by a portion of the microbump structures, and each of the first substrates includes at least one first redistribution layer. The first space layer is located between the stacked first substrates. The second substrates are stacked on at least one of the first substrates by another portion of the microbump structures, and each of the second substrates includes at least one second redistribution layer. The second space layer is located between the stacked first and second substrates. The first redistribution layers, the second redistribution layers and the microbump structures form a plurality of impedance elements, and the impedance elements provide a specific oscillation frequency.

Abstract: A semiconductor substrate assembly is proposed. The semiconductor interposer comprises a substrate having a first surface and a second surface opposite to the first surface, a first conductive pad, a second conductive pad and a conductive pillar. The first conductive pad is formed at a predetermined location of the first surface of the substrate. The second conductive pad is formed at a predetermined location of the second surface of the substrate as compared with the position of the first conductive pad. The conductive pillar is formed in the substrate and contacts with one of the first conductive pad and the second conductive pad.

Abstract: A white list (or exception list) for a behavior monitoring system for detecting unknown malware on a computing device is maintained automatically without human intervention. A white list contains process IDs and other data relating to processes that are determined to be (or very likely be) free of malware. If a process is on this list, the rule matching operations of a conventional behavior monitor are not performed, thereby saving processing resources on the computing device. When a process start up is detected, the behavior monitor performs a series of checks or tests. If the process has all valid digital signatures and is not launched from a removable storage device (such as a USB key) and is not enabled to make any inbound or outbound connections, it is eligible for being on the white list. The white list is also automatically maintained by removing process IDs for processes that have terminated or which attempt to make a new outbound or inbound connection, such as a TCP/UDP connection.