Abstract: A pixel circuit and an image sensor are disclosed. The pixel circuit has a photodiode and at least three MOS transistors. The at least three MOS transistors include a first transistor, a second transistor, and a third transistor, wherein a cathode of the photodiode is connected to a first terminal of the first transistor, and a second terminal of the first transistor is connected to a first terminal of the second transistor and a gate of the third transistor, wherein a threshold voltage of the first transistor is higher than a threshold voltage of the second transistor, and an off-state leakage current under operating voltage of the first transistor is less than an off-state leakage current under operating voltage of the second transistor.

Abstract: An amplifier circuit comprising a power amplifier and a protection circuit coupled to the power amplifier. The protection circuit is configured to detect an overdrive condition and, in response to detecting an overdrive condition, apply a clamping status to the protection circuit to reduce a bias current to the power amplifier. The protection circuit has a capacitor and a recovery circuit including: a sensing component configured to monitor a change of charging and discharging currents to and from the capacitor respectively during the clamping status; a first device configured to set a time constant of the recovery circuit; and a second device configured to reset the protection circuit to remove the clamping status when the change of charging or discharging current is beyond a predetermined threshold.

Abstract: The present invention relates to a vertically-charge-transferring pixel sensor (VPS) and methods of manufacture and operation thereof. In the VPS, deep trench isolation (DTI) structures and shallow trench isolation (STI) structures in a substrate contain deep trench electrodes and shallow trench electrodes, respectively. In a light sensing operation, a positive bias voltage can be applied between the substrate and the deep and shallow trench electrodes to raise a potential barrier at boundaries of the DTI and STI structures and the substrate. This reduces the likelihood of photoelectrons being captured at the boundaries, thus reducing loss of photoelectrons and contributing to enhanced quantum efficiency. In addition, in the STI structures, the shallow trench electrodes may be offset toward light sensing regions beside the STI structures.

Abstract: A message transmission method includes receiving, by a second device, a first message sent by a first device. The first message indicates at least one of the following: a sensing resolution related requirement; a sensing distance related requirement; a sensing area related requirement; a sensing object related requirement; a sensing error related requirement; a sensing signal quality related requirement; or a sensing delay related requirement.

Abstract: A dust collection base station, a dust cup for a dust collector, a cleaning device and a dust collection method belong to the field of cleaning devices. The dust collection base station includes a base station body and a cover opening structure, where an end of the base station body is provided with an accommodating groove; the cover opening structure is located on a side wall of the accommodating groove; and the cover opening structure is configured to trigger unlocking of a dust discharge cover of a dust cup when an air pressure in the accommodating groove is within a preset negative pressure range. During unlocking, since the air pressure in the accommodating groove is within the preset negative pressure range, the air pressure difference between the dust cup and the accommodating groove is within an acceptable range.

Abstract: A resource configuration method, an apparatus, a device, and a readable storage medium are provided. The method includes: receiving DCI; and determining, based on higher layer level signaling or the DCI, that a PUSCH transmission scheduled by the DCI is associated with one or more SRS resources.

Abstract: A PDSCH transmission method includes: in a case that transmission of a PDCCH occupies one or more transmission occasions for repetition sending, transmitting a PDSCH based on related configuration information of the PDCCH.

Abstract: This application discloses an information transmission method and apparatus, a terminal, and a network side device, and belongs to the field of communication technologies. The information transmission method in embodiments of this application includes: obtaining, by a terminal, an artificial intelligence (AI) model and a first identifier associated with the AI model, where the first identifier is associated with data collection or a dataset; and sending, by the terminal, a target request to a network side device, where the target request includes the first identifier, and the target request is used for requesting to perform model identification of the AI model.

Abstract: A Reference Signal (RS) measurement method and apparatus, and a communications device are provided. When being performed by a terminal, the RS measurement method includes: receiving RS measurement indication information sent by a network-side device. The RS measurement indication information is used to indicate that the terminal performs layer 1 beam measurement for an RS of a first cell. The RS measurement method further includes performing the layer 1 beam measurement for the RS of the first cell based on the RS measurement indication information. The terminal performs scheduling restriction or rate matching on a second cell when performing the layer 1 beam measurement for the RS of the first cell.

Abstract: The present invention discloses a tribochemical in-situ characterization device and application. The tribochemical in-situ characterization device includes an ATR support member, an ATR crystal and a heating module, a sample groove is formed in the ATR support member, a light path channel communicated with a bottom of the sample groove is formed in the ATR support member, the ATR crystal is mounted in the light path channel, and the heating module is arranged on a lower end surface of the ATR crystal. The tribochemical in-situ characterization device further includes a mechanical friction device that is arranged in the sample groove and above the ATR crystal. The mechanical friction device includes a sliding rail fixed to a top of the ATR support member, an adapter block slidably arranged on the sliding rail and a grinding head detachably fixed to a lower end of the adapter block.

Abstract: A method for beam recovery and a device are provided. The method includes: receiving resource(s) configured by a network side; and reporting information associated with beam recovery by using the resource(s) configured by the network side.

Abstract: An extended reality device including a gesture detection module, an eye tracking module, and a processing unit is provided. The processing unit is electrically coupled to the gesture detection module and the eye tracking module, and configured to display a shortcut window in response to a first operation, where the shortcut window includes a plurality of options; select one of the plurality of options in response to a second operation; and execute a function corresponding to the selected option in response to a third operation. At least two of the first operation, the second operation, and the third operation are gesture operations. A control method for the extended reality device is further provided.

Abstract: A PUSCH transmission method and apparatus, a device, and a storage medium are disclosed. The method includes: determining, by a terminal based on first indication information that is received, a target transmission resource configuration from at least one transmission resource configuration; and performing PUSCH transmission based on the target transmission resource configuration; where the first indication information includes at least one of the following: SRS resource indication information; TPMI indication information; and PTRS transmit port indication information.

Abstract: A random access transmission method and a terminal are provided. The method includes: obtaining a demodulation reference signal (DMRS) sequence generation parameter of a physical uplink shared channel (PUSCH); and sending a random access message according to the DMRS sequence generation parameter; where the random access message corresponds to the PUSCH and a PRACH.

Abstract: A beam failure recovery method and apparatus, a terminal, and a storage medium, are provided. The method includes: triggering a beam failure event in a first condition; and sending a Beam Failure Recovery reQuest (BFRQ) in a case that the beam failure event occurs, where the first condition and/or the BFRQ are/is related to M Beam Failure Detection Reference Signal BFD RS groups, and M is a positive integer greater than 1.

Abstract: Provided is a head-mounted display device. The head-mounted display device includes a head-mounted display, a control device, and an expansion battery. The control device includes a device battery and a controller. The controller controls operation of the head-mounted display. The expansion battery is detachably assembled to the control device. After the expansion battery and the control device are assembled, the expansion battery supplies power to the controller and charges the device battery.

Abstract: A method for fabricating an interposer structure includes: providing a substrate; forming a first opening and filling a first conductive layer in the first opening; forming a first dielectric layer on a first surface of the substrate and forming a first redistribution metal layer in the first dielectric layer; forming a second opening and filling a second conductive layer in the second opening; forming a second dielectric layer on a second surface of the substrate and forming a second redistribution metal layer in the second dielectric layer. Through the redistribution metal layer for wiring is formed on both sides of the substrate in the thickness direction, the high-intensity interconnection requirements can be satisfied. The first opening and the second opening are formed from both sides of the substrate in the thickness direction, respectively, and communicate with each other to make up a TSV hole.

Abstract: A silicon rod cutting system, including: a machine base (1), wherein the machine base has at least two cutting stations, which are disposed at intervals; at least two cutting devices (4), which are fixed on the machine base, wherein the cutting devices are in one-to-one correspondence with the cutting stations, and the cutting devices are configured to cut a silicon rods on the cutting stations; a loading and unloading device (2), which is fixed with the machine base, wherein the loading and unloading device is configured to load a round silicon rod and unloading a square rod formed by cutting; and a transfer device (3), which is disposed on the machine base and is disposed between the cutting stations, wherein the transfer device is configured transfer, to the cutting station, the silicon rod loaded by the loading and unloading device, and transfer the square rod formed on the cutting stations to the loading and unloading device.